Output properties of C60 field-effect transistors with different source/drain electrodes

Nobuya Takahashi, Akira Maeda, Koichi Uno, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, Yoshihiro Kubozono, Akihiko Fujiwara

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Abstract

C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.

Original languageEnglish
Article number083503
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
Publication statusPublished - Mar 1 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Takahashi, N., Maeda, A., Uno, K., Shikoh, E., Yamamoto, Y., Hori, H., Kubozono, Y., & Fujiwara, A. (2007). Output properties of C60 field-effect transistors with different source/drain electrodes. Applied Physics Letters, 90(8), [083503]. https://doi.org/10.1063/1.2709523