@article{df3315be808340d6a62dec24887debc2,
title = "Output properties of C60 field-effect transistors with different source/drain electrodes",
abstract = "C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.",
author = "Nobuya Takahashi and Akira Maeda and Koichi Uno and Eiji Shikoh and Yoshiyuki Yamamoto and Hidenobu Hori and Yoshihiro Kubozono and Akihiko Fujiwara",
note = "Funding Information: The authors are grateful to the staff of the Center for Nano Materials and Technology at the Japan Advanced Institute of Science and Technology for technical support. This work is supported in part by the Grant-in-Aid for Scientific Research (Grant Nos. 16206001, 17310059, 17540322) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan, a NEDO grant (Grant No. 04IT5) from the New Energy and Industrial Technology Development Organization (NEDO), and a Grant from Kurata Memorial Hitachi Science and Technology Foundation.",
year = "2007",
doi = "10.1063/1.2709523",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",
}