Output properties of C60 field-effect transistors with different source/drain electrodes

Nobuya Takahashi; Akira Maeda; Koichi Uno; Eiji Shikoh; Yoshiyuki Yamamoto; Hidenobu Hori; Yoshihiro Kubozono; Akihiko Fujiwara

doi:10.1063/1.2709523

Output properties of C60 field-effect transistors with different source/drain electrodes

Nobuya Takahashi, Akira Maeda, Koichi Uno, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, Yoshihiro Kubozono, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.

Original language	English
Article number	083503
Journal	Applied Physics Letters
Volume	90
Issue number	8
DOIs	https://doi.org/10.1063/1.2709523
Publication status	Published - Mar 1 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2709523

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title = "Output properties of C60 field-effect transistors with different source/drain electrodes",

abstract = "C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.",

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T1 - Output properties of C60 field-effect transistors with different source/drain electrodes

AU - Takahashi, Nobuya

AU - Maeda, Akira

AU - Uno, Koichi

AU - Shikoh, Eiji

AU - Yamamoto, Yoshiyuki

AU - Hori, Hidenobu

AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

PY - 2007/3/1

Y1 - 2007/3/1

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