Output properties of C60 field-effect transistors with different source/drain electrodes

Nobuya Takahashi, Akira Maeda, Koichi Uno, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, Yoshihiro Kubozono, Akihiko Fujiwara

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15 Citations (Scopus)


C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.

Original languageEnglish
Article number083503
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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