Output properties of C60 field-effect transistors with different source/drain electrodes

Nobuya Takahashi, Akira Maeda, Koichi Uno, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori, Yoshihiro Kubozono, Akihiko Fujiwara

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.

    Original languageEnglish
    Article number083503
    JournalApplied Physics Letters
    Volume90
    Issue number8
    DOIs
    Publication statusPublished - 2007

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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