Output properties of C60 field-effect transistors with different source/drain electrodes

C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.