Abstract
C60 field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μFE of FETs with ITO electrodes, 1.6× 10-1 cm2 V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μFE were expected, μFE of FET with Pt electrodes (1.4× 10-1 cm2 V s) is higher than that of FET with Au electrodes (9.6× 10-2 cm2 V s). The result suggests that modification of local electronic structure at the interface between electrodes and C60 affects device performance.
| Original language | English |
|---|---|
| Article number | 083503 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Mar 1 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Output properties of C60 field-effect transistors with different source/drain electrodes'. Together they form a unique fingerprint.
Cite this
Takahashi, N., Maeda, A., Uno, K., Shikoh, E., Yamamoto, Y., Hori, H., Kubozono, Y., & Fujiwara, A. (2007). Output properties of C60 field-effect transistors with different source/drain electrodes. Applied Physics Letters, 90(8), [083503]. https://doi.org/10.1063/1.2709523