Output characteristics of stacked CMOS-type active pixel sensor for charged particles

Kazuhide Nagashima, Takuya Kunihiro, Isao Takayanagi, Junichi Nakamura, Koji Kosaka, Hisayoshi Yurimoto

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A stacked CMOS-type active pixel sensor (SCAPS) for charged particles has been developed. The SCAPS is an integral-type detector that has several advantages over conventional systems, including two-dimensional detection, wide dynamic range, no insensitive time, direct detection of charged particles and a high degree of robustness. The output characteristics of the SCAPS for incident charged particles has been analysed both theoretically and experimentally. The relationships between the output voltage of the SCAPS and the number of incident charged particles were formulated by including corrections for the non-ideal characteristics of transistors in a pixel. The fluctuation of output characteristics of the SCAPS was evaluated experimentally by irradiation of secondary 4.5 keV Si+ ions generated by SIMS. The function was used to determine the number of incident ions into each SCAPS pixel within twice the statistical error. The SCAPS is useful as a two-dimensional detector for microanalysis, such as stigmatic SIMS.

Original languageEnglish
Pages (from-to)131-137
Number of pages7
JournalSurface and Interface Analysis
Volume31
Issue number2
DOIs
Publication statusPublished - Feb 1 2001
Externally publishedYes

Keywords

  • Charged particle
  • Detector
  • SIMS
  • Solid-state image sensor

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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