Abstract
The yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease rate for the yellow-band intensity is less compared to the near-bandedge intensity; however, it is found that the ratio of the yellow-band intensity to the near-bandedge PL intensity increases with increasing electron irradiation dose. To interpret this phenomenon, a theoretical model is developed for the yellow-to-near-bandedge intensity ratio based on rate equations. The proposed model is in good agreement with the experimental observation. The electron spin resonance (ESR) and light-induced ESR (LESR) spectra are measured to investigate deep defects induced by electron irradiation. The ESR signal intensity at g = 1.9451 decreases with increasing electron irradiation dose and increases with the light-induced time.
| Original language | English |
|---|---|
| Pages (from-to) | 12-17 |
| Number of pages | 6 |
| Journal | Physica B: Condensed Matter |
| Volume | 304 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Sep 2001 |
| Externally published | Yes |
Keywords
- Electron irradiation
- GaN
- Light-induced ESR
- Photoluminescence
- UV luminescence
- Yellow luminescence
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering