TY - JOUR
T1 - Origin of magnetization in diluted magnetic semiconductor GaGdAs monolayer and superlattice
AU - Miyagawa, Hayato
AU - Funaki, Nakaba
AU - Koshiba, Shyun
AU - Takahashi, Naoshi
AU - Inada, Yoshihiko
AU - Mizumaki, Masaichiro
AU - Kawamura, Naomi
AU - Suzuki, Motohiro
N1 - Funding Information:
The work at SPring-8 was performed with the approval of the Japan Synchrotron Radiation Research Institute ( JASRI ) under proposal No. 2012B1071 . Financial support from JSPS KEKENHI Grant Number JP18710088 is also acknowledged.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/4/15
Y1 - 2019/4/15
N2 - In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μ B because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.
AB - In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μ B because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.
KW - Diluted magnetic semiconductor
KW - Gadolinium
KW - X-ray magnetic circular dichroism
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U2 - 10.1016/j.jmmm.2018.10.084
DO - 10.1016/j.jmmm.2018.10.084
M3 - Article
AN - SCOPUS:85059462811
VL - 476
SP - 213
EP - 217
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -