Abstract
In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μB because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.
| Original language | English |
|---|---|
| Pages (from-to) | 213-217 |
| Number of pages | 5 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 476 |
| DOIs | |
| Publication status | Published - Apr 15 2019 |
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Keywords
- Diluted magnetic semiconductor
- Gadolinium
- X-ray magnetic circular dichroism
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Origin of magnetization in diluted magnetic semiconductor GaGdAs monolayer and superlattice. / Miyagawa, Hayato; Funaki, Nakaba; Koshiba, Shyun; Takahashi, Naoshi; Inada, Yoshihiko; Mizumaki, Masaichiro; Kawamura, Naomi; Suzuki, Motohiro.
In: Journal of Magnetism and Magnetic Materials, Vol. 476, 15.04.2019, p. 213-217.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Origin of magnetization in diluted magnetic semiconductor GaGdAs monolayer and superlattice
AU - Miyagawa, Hayato
AU - Funaki, Nakaba
AU - Koshiba, Shyun
AU - Takahashi, Naoshi
AU - Inada, Yoshihiko
AU - Mizumaki, Masaichiro
AU - Kawamura, Naomi
AU - Suzuki, Motohiro
PY - 2019/4/15
Y1 - 2019/4/15
N2 - In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μB because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.
AB - In this study, monolayer (ML)- and superlattice (SL)-diluted magnetic GaGdAs semiconductors are fabricated, and their electronic states are analyzed by X-ray absorption spectrum (XAS) and magnetic circular dichroism (MCD) by comparing with the values observed in case of macroscopic magnetization. The Gd magnetic moment per atom that was obtained from MCD exhibited a lower value than that obtained from a superconducting quantum interference device (SQUID) and tended to be larger in the SL structure as compared to the ML structure. We further observed that the Gd magnetic moment was enhanced by more than several tens of μB because of increasing carrier density by Si doping. The transmission electron microscopy images revealed dark regions with diameters of 2–3 nm, which were indicative of the high concentrations of Gd that further resulted in the formation of zincblend GaGdAs particles.
KW - Diluted magnetic semiconductor
KW - Gadolinium
KW - X-ray magnetic circular dichroism
UR - http://www.scopus.com/inward/record.url?scp=85059462811&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059462811&partnerID=8YFLogxK
U2 - 10.1016/j.jmmm.2018.10.084
DO - 10.1016/j.jmmm.2018.10.084
M3 - Article
AN - SCOPUS:85059462811
VL - 476
SP - 213
EP - 217
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
ER -