Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films

Masakazu Mitsugi, Shutaro Asanuma, Yoshiaki Uesu, Mamoru Fukunaga, Wataru Kobayashi, Ichiro Terasaki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

To elucidate the origin of the colossal dielectric response (CDR) of Ca Cu3 Ti4 O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTi O3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

Original languageEnglish
Article number242904
JournalApplied Physics Letters
Volume90
Issue number24
DOIs
Publication statusPublished - 2007
Externally publishedYes

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capacitance
barrier layers
thin films
pulsed laser deposition
capacitors
permittivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films. / Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro.

In: Applied Physics Letters, Vol. 90, No. 24, 242904, 2007.

Research output: Contribution to journalArticle

Mitsugi, Masakazu ; Asanuma, Shutaro ; Uesu, Yoshiaki ; Fukunaga, Mamoru ; Kobayashi, Wataru ; Terasaki, Ichiro. / Origin of colossal dielectric response of Ca Cu3 Ti4 O12 studied by using CaTi O3 Ca Cu3 Ti4 O12 CaTi O3 multilayer thin films. In: Applied Physics Letters. 2007 ; Vol. 90, No. 24.
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