Optical response in amorphous GaAs thin films prepared by pulsed laser deposition

Toshihiko Kiwa, Ichiro Kawashima, Shigeki Nashima, Masanori Hangyo, Masayoshi Tonouchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 °C. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiation] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

Original languageEnglish
Pages (from-to)6304-6308
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
Publication statusPublished - Nov 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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