Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

J. C. Ribierre; K. Takaishi; L. Mager; T. Fujihara; T. Muto; M. Uchiyama; T. Aoyama

doi:10.1080/15421406.2012.701107

Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

J. C. Ribierre, K. Takaishi, L. Mager, T. Fujihara, T. Muto, M. Uchiyama, T. Aoyama

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

Original language	English
Pages (from-to)	2-7
Number of pages	6
Journal	Molecular Crystals and Liquid Crystals
Volume	566
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2012.701107
Publication status	Published - Nov 1 2012
Externally published	Yes

Keywords

Quinoidal oligothiophene
ambipolar organic transistor
degree of aggregation
majority carrier type conversion
optical properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421406.2012.701107

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title = "Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative",

abstract = "We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.",

keywords = "Quinoidal oligothiophene, ambipolar organic transistor, degree of aggregation, majority carrier type conversion, optical properties",

author = "Ribierre, {J. C.} and K. Takaishi and L. Mager and T. Fujihara and T. Muto and M. Uchiyama and T. Aoyama",

note = "Funding Information: JCR and LM would like to acknowledge funding from the STAR program. JCR also gratefully acknowledges funding from the Ewha internal research grant program. The research leading to these results has also received funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (No.22350084).",

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doi = "10.1080/15421406.2012.701107",

language = "English",

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AU - Ribierre, J. C.

AU - Takaishi, K.

AU - Mager, L.

AU - Fujihara, T.

AU - Muto, T.

AU - Uchiyama, M.

AU - Aoyama, T.

N1 - Funding Information: JCR and LM would like to acknowledge funding from the STAR program. JCR also gratefully acknowledges funding from the Ewha internal research grant program. The research leading to these results has also received funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (No.22350084).

PY - 2012/11/1

Y1 - 2012/11/1

N2 - We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

AB - We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

KW - Quinoidal oligothiophene

KW - ambipolar organic transistor

KW - degree of aggregation

KW - majority carrier type conversion

KW - optical properties

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Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

Abstract

Keywords

ASJC Scopus subject areas

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