Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

J. C. Ribierre; K. Takaishi; L. Mager; T. Fujihara; T. Muto; M. Uchiyama; T. Aoyama

doi:10.1080/15421406.2012.701107

Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

J. C. Ribierre, K. Takaishi, L. Mager, T. Fujihara, T. Muto, M. Uchiyama, T. Aoyama

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

Original language	English
Pages (from-to)	2-7
Number of pages	6
Journal	Molecular Crystals and Liquid Crystals
Volume	566
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2012.701107
Publication status	Published - Nov 1 2012
Externally published	Yes

Keywords

Quinoidal oligothiophene
ambipolar organic transistor
degree of aggregation
majority carrier type conversion
optical properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1080/15421406.2012.701107

Fingerprint Dive into the research topics of 'Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative'. Together they form a unique fingerprint.

Cite this

@article{387edab3fb4f4133b71f0fa6b865b24e,

title = "Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative",

abstract = "We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.",

keywords = "Quinoidal oligothiophene, ambipolar organic transistor, degree of aggregation, majority carrier type conversion, optical properties",

author = "Ribierre, {J. C.} and K. Takaishi and L. Mager and T. Fujihara and T. Muto and M. Uchiyama and T. Aoyama",

year = "2012",

month = nov,

day = "1",

doi = "10.1080/15421406.2012.701107",

language = "English",

volume = "566",

pages = "2--7",

journal = "Molecular Crystals and Liquid Crystals",

issn = "1542-1406",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Optical and charge transport properties of an ambipolar quinoidal oligothiophene derivative

AU - Ribierre, J. C.

AU - Takaishi, K.

AU - Mager, L.

AU - Fujihara, T.

AU - Muto, T.

AU - Uchiyama, M.

AU - Aoyama, T.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

AB - We report on the charge transport and absorption properties of a low bandgap quinoidal oligothiophene derivative [QQT(CN)4]. Organic field-effect transistors based on as-prepared QQT(CN)4 thin films show an ambipolar p-type dominant behavior and can be converted to n-type by thermal annealing at 100C for 30 minutes. Absorption spectra and atomic force microscopy measurements carried out in both neat films and polymer blends provide new important insights into the role of the degree of aggregation and the intermolecular interactions on the semiconducting and photophysical properties of this organic electronic material.

KW - Quinoidal oligothiophene

KW - ambipolar organic transistor

KW - degree of aggregation

KW - majority carrier type conversion

KW - optical properties

UR - http://www.scopus.com/inward/record.url?scp=84866601501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866601501&partnerID=8YFLogxK

U2 - 10.1080/15421406.2012.701107

DO - 10.1080/15421406.2012.701107

M3 - Article

AN - SCOPUS:84866601501

VL - 566

SP - 2

EP - 7

JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

SN - 1542-1406

IS - 1

ER -