Abstract
A guide line is proposed to design efficient dislocation filters having modulus-modulated multilayer (MMML) structures strained in one direction. The central design concepts are (a) large blocking effect owing to MMML structure, (b) large sweeping effect owing to the use of MMML with built-in stresses in a common direction and stacked to a total thickness exceeding the multilayer critical thickness, and (c) filter thickness as large as possible to enhance the sweeping effect. Experimental results on a Si-Ge/Si heterostructure fabricated according to the guide line are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 451-455 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 127 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Feb 2 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Maeda, K., Yamashita, Y., Fujita, K., Fukatsu, S., Suzuki, K., Mera, Y., & Shiraki, Y. (1993). On optimum design of dislocation filters for reduction of misfit dislocations. Journal of Crystal Growth, 127(1-4), 451-455. https://doi.org/10.1016/0022-0248(93)90659-K