Observation of Long Relaxation from Fe0(3d8) to Fe+(3d7) by Electron Spin Resonance Measurement

Takeshi Ishiyama; Toshinobu Hiramatsu; Yoshifumi Yamashita; Yoichi Kamiura

doi:10.1143/JJAP.43.9

Observation of Long Relaxation from Fe⁰(3d⁸) to Fe⁺(3d⁷) by Electron Spin Resonance Measurement

Takeshi Ishiyama, Toshinobu Hiramatsu, Yoshifumi Yamashita, Yoichi Kamiura

Research output: Contribution to journal › Article

Abstract

We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (HSR) measurement. ESR signals originating from Fe_i⁺(3d⁷) and Fe _i⁰(3d⁸) were observed in Fe- and B-doped Si. The ESR signal of Fe_i⁺(3d⁷) disappeared and the signal intensity of Fe_i⁰(3d⁸) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fe_i⁺(3d⁷) to Fe_i⁰(3d⁸) due to the capture of an electron. Subsequently, the process of recovery from Fe_i⁰(3d ⁸) to Fe_i⁺(3d⁷) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fe_i⁰(3d⁸) to Fe _i⁺(3d⁷) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.

Original language	English
Pages (from-to)	9-11
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.43.9
Publication status	Published - Jan 2004

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Keywords

3d-electron
Charge state
Electron spin resonance
Fe
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Ishiyama, T., Hiramatsu, T., Yamashita, Y., & Kamiura, Y. (2004). Observation of Long Relaxation from Fe⁰(3d⁸) to Fe⁺(3d⁷) by Electron Spin Resonance Measurement. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(1), 9-11. https://doi.org/10.1143/JJAP.43.9

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title = "Observation of Long Relaxation from Fe0(3d8) to Fe+(3d7) by Electron Spin Resonance Measurement",

abstract = "We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (HSR) measurement. ESR signals originating from Fei+(3d7) and Fe i0(3d8) were observed in Fe- and B-doped Si. The ESR signal of Fei+(3d7) disappeared and the signal intensity of Fei0(3d8) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fei+(3d7) to Fei0(3d8) due to the capture of an electron. Subsequently, the process of recovery from Fei0(3d 8) to Fei+(3d7) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fei0(3d8) to Fe i+(3d7) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.",

keywords = "3d-electron, Charge state, Electron spin resonance, Fe, Silicon",

author = "Takeshi Ishiyama and Toshinobu Hiramatsu and Yoshifumi Yamashita and Yoichi Kamiura",

year = "2004",

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AU - Kamiura, Yoichi

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N2 - We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (HSR) measurement. ESR signals originating from Fei+(3d7) and Fe i0(3d8) were observed in Fe- and B-doped Si. The ESR signal of Fei+(3d7) disappeared and the signal intensity of Fei0(3d8) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fei+(3d7) to Fei0(3d8) due to the capture of an electron. Subsequently, the process of recovery from Fei0(3d 8) to Fei+(3d7) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fei0(3d8) to Fe i+(3d7) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.

AB - We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (HSR) measurement. ESR signals originating from Fei+(3d7) and Fe i0(3d8) were observed in Fe- and B-doped Si. The ESR signal of Fei+(3d7) disappeared and the signal intensity of Fei0(3d8) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fei+(3d7) to Fei0(3d8) due to the capture of an electron. Subsequently, the process of recovery from Fei0(3d 8) to Fei+(3d7) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fei0(3d8) to Fe i+(3d7) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.

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10.1143/JJAP.43.9