Abstract
We studied the change in the 3d-shell configurations of Fe in B-doped Si under illumination by electron spin resonance (HSR) measurement. ESR signals originating from Fei+(3d7) and Fe i0(3d8) were observed in Fe- and B-doped Si. The ESR signal of Fei+(3d7) disappeared and the signal intensity of Fei0(3d8) increased under illumination. These changes of the ESR signals under illumination were caused by the change in the charge state from Fei+(3d7) to Fei0(3d8) due to the capture of an electron. Subsequently, the process of recovery from Fei0(3d 8) to Fei+(3d7) due to the capture of a hole was observed after the light was turned off. We found that the relaxation time from Fei0(3d8) to Fe i+(3d7) was approximately 30 s at 8 K. This was much longer than the lifetime of a free hole.
Original language | English |
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Pages (from-to) | 9-11 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2004 |
Keywords
- 3d-electron
- Charge state
- Electron spin resonance
- Fe
- Silicon
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)