O 2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O 2 gas sensor

Yasuyuki Sugawara, Keiko Ogawa, Hidenori Goto, Shuhei Oikawa, Kouki Akaike, Noriko Komura, Ritsuko Eguchi, Yumiko Kaji, Shin Gohda, Yoshihiro Kubozono

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Transistor characteristics and O 2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO 2, Ta 2O 5, HfO 2 and Ba xSr 1-xTiO 3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO 2 gate dielectric. The O 2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V D and V G), in contrast to previous result in which the O 2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O 2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O 2, and the O 2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O 2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O 2 sensing mechanism in picene thin film FET.

Original languageEnglish
Pages (from-to)544-549
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume171-172
DOIs
Publication statusPublished - Aug 1 2012

Keywords

  • Light irradiation
  • O gas sensor
  • Organic thin film FET
  • Picene
  • Pulse-bias application

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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