O 2-exposure and light-irradiation properties of picene thin film field-effect transistor

A new way toward O 2 gas sensor

Yasuyuki Sugawara, Keiko Ogawa, Hidenori Goto, Shuhei Oikawa, Kouki Akaike, Noriko Komura, Ritsuko Eguchi, Yumiko Kaji, Shin Gohda, Yoshihiro Kubozono

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Transistor characteristics and O 2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO 2, Ta 2O 5, HfO 2 and Ba xSr 1-xTiO 3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO 2 gate dielectric. The O 2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V D and V G), in contrast to previous result in which the O 2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O 2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O 2, and the O 2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O 2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O 2 sensing mechanism in picene thin film FET.

Original languageEnglish
Pages (from-to)544-549
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume171-172
DOIs
Publication statusPublished - Aug 2012

Fingerprint

Thin film transistors
Field effect transistors
Chemical sensors
field effect transistors
Gases
Gate dielectrics
Irradiation
irradiation
sensors
thin films
gases
Electric potential
Oxides
Transistors
Permittivity
Wavelength
picene
low voltage
transistors
permittivity

Keywords

  • Light irradiation
  • O gas sensor
  • Organic thin film FET
  • Picene
  • Pulse-bias application

ASJC Scopus subject areas

  • Instrumentation
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

O 2-exposure and light-irradiation properties of picene thin film field-effect transistor : A new way toward O 2 gas sensor. / Sugawara, Yasuyuki; Ogawa, Keiko; Goto, Hidenori; Oikawa, Shuhei; Akaike, Kouki; Komura, Noriko; Eguchi, Ritsuko; Kaji, Yumiko; Gohda, Shin; Kubozono, Yoshihiro.

In: Sensors and Actuators, B: Chemical, Vol. 171-172, 08.2012, p. 544-549.

Research output: Contribution to journalArticle

Sugawara, Yasuyuki ; Ogawa, Keiko ; Goto, Hidenori ; Oikawa, Shuhei ; Akaike, Kouki ; Komura, Noriko ; Eguchi, Ritsuko ; Kaji, Yumiko ; Gohda, Shin ; Kubozono, Yoshihiro. / O 2-exposure and light-irradiation properties of picene thin film field-effect transistor : A new way toward O 2 gas sensor. In: Sensors and Actuators, B: Chemical. 2012 ; Vol. 171-172. pp. 544-549.
@article{a38ed7923326467fb7e1022c2a74e849,
title = "O 2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O 2 gas sensor",
abstract = "Transistor characteristics and O 2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO 2, Ta 2O 5, HfO 2 and Ba xSr 1-xTiO 3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO 2 gate dielectric. The O 2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V D and V G), in contrast to previous result in which the O 2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O 2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O 2, and the O 2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O 2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O 2 sensing mechanism in picene thin film FET.",
keywords = "Light irradiation, O gas sensor, Organic thin film FET, Picene, Pulse-bias application",
author = "Yasuyuki Sugawara and Keiko Ogawa and Hidenori Goto and Shuhei Oikawa and Kouki Akaike and Noriko Komura and Ritsuko Eguchi and Yumiko Kaji and Shin Gohda and Yoshihiro Kubozono",
year = "2012",
month = "8",
doi = "10.1016/j.snb.2012.05.030",
language = "English",
volume = "171-172",
pages = "544--549",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",

}

TY - JOUR

T1 - O 2-exposure and light-irradiation properties of picene thin film field-effect transistor

T2 - A new way toward O 2 gas sensor

AU - Sugawara, Yasuyuki

AU - Ogawa, Keiko

AU - Goto, Hidenori

AU - Oikawa, Shuhei

AU - Akaike, Kouki

AU - Komura, Noriko

AU - Eguchi, Ritsuko

AU - Kaji, Yumiko

AU - Gohda, Shin

AU - Kubozono, Yoshihiro

PY - 2012/8

Y1 - 2012/8

N2 - Transistor characteristics and O 2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO 2, Ta 2O 5, HfO 2 and Ba xSr 1-xTiO 3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO 2 gate dielectric. The O 2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V D and V G), in contrast to previous result in which the O 2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O 2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O 2, and the O 2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O 2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O 2 sensing mechanism in picene thin film FET.

AB - Transistor characteristics and O 2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO 2, Ta 2O 5, HfO 2 and Ba xSr 1-xTiO 3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO 2 gate dielectric. The O 2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (V D and V G), in contrast to previous result in which the O 2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O 2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O 2, and the O 2 sensing limit was concluded to be 0.15-0.38 Torr. Furthermore, it has been found that the O 2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O 2 sensing mechanism in picene thin film FET.

KW - Light irradiation

KW - O gas sensor

KW - Organic thin film FET

KW - Picene

KW - Pulse-bias application

UR - http://www.scopus.com/inward/record.url?scp=84864283800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864283800&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2012.05.030

DO - 10.1016/j.snb.2012.05.030

M3 - Article

VL - 171-172

SP - 544

EP - 549

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

ER -