Novel n-type conducting amorphous chalcogenide CdS · In2Sx: An extension of working hypothesis for conducting amorphous oxides

Hideo Hosono, Hiroo Maeda, Yoshikazu Kameshima, Hiroshi Kawazoe

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Novel n-type conducting amorphous Cd-In-S chalcogenide have been prepared by extending a working hypothesis to explore transparent conducting amorphous oxide to chalcogenides. The dc conductivity of the as-deposited samples is ∼10-4 S cm-1 at 300 K and can be further increased to ∼10-2 S cm-1 by heat treatment at temperature less than crystallization temperature. The activation energy of dark conductivity was ∼0.3 eV in the as-deposited samples and ∼0.13 eV for the annealed samples. Both activation energies are much less than the half of the Taue optical band gap (∼2.2 eV). Variable-range hopping was observed in the annealed samples at temperatures below 40 K. The signs of Seebeck and Hall coefficients were negative, indicating that conduction is n-type and no sign anomaly was observed in the Hall voltage. We suggest that the Fermi energy is controllable by doping of carrier electrons via thermal formation of the anion vacancy as has been observed in amorphous ionic oxides such as Cd2PbO4.

Original languageEnglish
Pages (from-to)804-809
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
DOIs
Publication statusPublished - May 1998
Externally publishedYes

Keywords

  • Amorphous Cd-In-S
  • Amorphous chalcogenide
  • Hall coefficient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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