Nondestructive inspection of SiGe films using laser terahertz emission microscopy

Akihiro Nakamura, Ken Omura, Kenji Sakai, Toshihiko Kiwa, Keiji Tsukada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Laser terahertz emission microscopy was applied to investigate the SiGe film on the Si substrate. In this study, as the initial experiment to apply LTEM to non-destructive evaluation of the strained SiGe films, the THz emission properties of the strained-SiGe were measured.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs
Publication statusPublished - Oct 18 2013
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: Jun 30 2013Jul 4 2013

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period6/30/137/4/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Nakamura, A., Omura, K., Sakai, K., Kiwa, T., & Tsukada, K. (2013). Nondestructive inspection of SiGe films using laser terahertz emission microscopy. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600524] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600524