Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope

Masatsugu Yamashita, Toshihiko Kiwa, Masayoshi Tonouchi, Kiyoshi Nikawa, Chiko Otani, Kodo Kawase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

For inspecting electrical failures in large-scale integration (LSI) circuits, we developed the laser-THz emission microscope (LTEM), which records the map of THz emission amplitude in a sample upon excitation with fs laser pulses. We successfully observed the THz emission image of MOSFETs embedded in a test element group under zero bias voltage. This result suggests that the LTEM can be used not only for the defect localization in LSI failure analysis but also as in-line inspection and monitoring.

Original languageEnglish
Title of host publicationConference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
EditorsM. Thumm, W. Wiesbeck
Pages515-516
Number of pages2
Publication statusPublished - 2004
EventConference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics - Karlsruhe, Germany
Duration: Sep 27 2004Oct 1 2004

Other

OtherConference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics
CountryGermany
CityKarlsruhe
Period9/27/0410/1/04

Fingerprint

LSI circuits
Bias voltage
Microscopes
Lasers
Failure analysis
Laser pulses
Inspection
Defects
Networks (circuits)
Monitoring

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamashita, M., Kiwa, T., Tonouchi, M., Nikawa, K., Otani, C., & Kawase, K. (2004). Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. In M. Thumm, & W. Wiesbeck (Eds.), Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (pp. 515-516)

Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. / Yamashita, Masatsugu; Kiwa, Toshihiko; Tonouchi, Masayoshi; Nikawa, Kiyoshi; Otani, Chiko; Kawase, Kodo.

Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. ed. / M. Thumm; W. Wiesbeck. 2004. p. 515-516.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamashita, M, Kiwa, T, Tonouchi, M, Nikawa, K, Otani, C & Kawase, K 2004, Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. in M Thumm & W Wiesbeck (eds), Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. pp. 515-516, Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, 9/27/04.
Yamashita M, Kiwa T, Tonouchi M, Nikawa K, Otani C, Kawase K. Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. In Thumm M, Wiesbeck W, editors, Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. 2004. p. 515-516
Yamashita, Masatsugu ; Kiwa, Toshihiko ; Tonouchi, Masayoshi ; Nikawa, Kiyoshi ; Otani, Chiko ; Kawase, Kodo. / Non-contact measurement of MOSFET with zero bias voltage using the Laser-THz emission microscope. Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics. editor / M. Thumm ; W. Wiesbeck. 2004. pp. 515-516
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