Nodeless superconducting gap in the candidate topological superconductor Sn1-x Inx Te for x=0.7

M. P. Smylie; Kaya Kobayashi; T. Takahashi; C. Chaparro; A. Snezhko; W. K. Kwok; U. Welp

doi:10.1103/PhysRevB.101.094513

Nodeless superconducting gap in the candidate topological superconductor Sn1-x Inx Te for x=0.7

M. P. Smylie, Kaya Kobayashi, T. Takahashi, C. Chaparro, A. Snezhko, W. K. Kwok, U. Welp

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

Abstract

High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x=0.5 (Tc∼4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Δλ(T) in this superconducting doped topological insulator for x=0.7, where Tc,onset≈5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A2u pairing; however, odd-parity A1u pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

Original language	English
Article number	094513
Journal	Physical Review B
Volume	101
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevB.101.094513
Publication status	Published - Mar 1 2020

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{e96b7a69ac0e4a6490f93d3a29b5d611,

title = "Nodeless superconducting gap in the candidate topological superconductor Sn1-x Inx Te for x=0.7",

abstract = "High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x=0.5 (Tc∼4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Δλ(T) in this superconducting doped topological insulator for x=0.7, where Tc,onset≈5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A2u pairing; however, odd-parity A1u pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.",

author = "Smylie, {M. P.} and Kaya Kobayashi and T. Takahashi and C. Chaparro and A. Snezhko and Kwok, {W. K.} and U. Welp",

note = "Funding Information: TDO and magnetization measurements at Argonne were supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Crystal synthesis was supported by Grant-in-Aid from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) under Grants No. 18K03540 and No. 19H01852.",

year = "2020",

month = mar,

day = "1",

doi = "10.1103/PhysRevB.101.094513",

language = "English",

volume = "101",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "9",

}

TY - JOUR

T1 - Nodeless superconducting gap in the candidate topological superconductor Sn1-x Inx Te for x=0.7

AU - Smylie, M. P.

AU - Kobayashi, Kaya

AU - Takahashi, T.

AU - Chaparro, C.

AU - Snezhko, A.

AU - Kwok, W. K.

AU - Welp, U.

N1 - Funding Information: TDO and magnetization measurements at Argonne were supported by the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. Crystal synthesis was supported by Grant-in-Aid from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) under Grants No. 18K03540 and No. 19H01852.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x=0.5 (Tc∼4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Δλ(T) in this superconducting doped topological insulator for x=0.7, where Tc,onset≈5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A2u pairing; however, odd-parity A1u pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

AB - High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x=0.5 (Tc∼4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Δλ(T) in this superconducting doped topological insulator for x=0.7, where Tc,onset≈5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A2u pairing; however, odd-parity A1u pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

UR - http://www.scopus.com/inward/record.url?scp=85083210592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083210592&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.094513

DO - 10.1103/PhysRevB.101.094513

M3 - Article

AN - SCOPUS:85083210592

VL - 101

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 9

M1 - 094513

ER -