TY - JOUR
T1 - NMR study of carrier distribution and superconductivity in multilayered high-Tc cuprates
AU - Kotegawa, H.
AU - Tokunaga, Y.
AU - Ishida, K.
AU - Zheng, G. Q.
AU - Kitaoka, Y.
AU - Asayama, K.
AU - Kito, H.
AU - Iyo, A.
AU - Ihara, H.
AU - Tanaka, K.
AU - Tokiwa, K.
AU - Watanabe, T.
N1 - Funding Information:
This work was partly supported by the COE Research (10CE2004) in a Grant-in-Aid for Scientific Research from the Ministry of Education, Sports, Science and Culture of Japan. One of authors (YT) have been supported by JSPS Research Fellowships for Young Scientists .
PY - 2001/1
Y1 - 2001/1
N2 - We report 63Cu-Knight shift measurement on multilayered high-Tc cuprate oxides that include inequivalent outer (OP) and inner (IP) CuO2 planes in a unit cell with number of planes n = 3-5. Using an experimental relation between the spin part of Knight shift (Ks) and the carrier concentration (Nh) reported in n = 1 and 2 cuprates, the local carrier concentrations Nh(OP) in the OP and Nh(IP) in the IP have been deduced. We have found that Nh(OP) is larger than Nh(IP) in all the systems. The difference in the doping level increases as total-carrier content δ and n increase. Imbalance between Nh(OP) and Nh(IP) is suggested to be caused by a mechanism that the electrostatic potential associated with the apical oxygen has more attraction for holes in the OP than in the IP. It is also suggested that Tc of Hg1223 (n = 3) is the highest (Tc = 133 K) to date, due to Nh(IP) optimized to Nh,optimum to approximately 0.2. From the fact that Nh(OP)>Nh,optimum, we propose that if Nh(OP) could also be optimized in addition to optimized Nh(IP), Tc might be raised higher than 133 K.
AB - We report 63Cu-Knight shift measurement on multilayered high-Tc cuprate oxides that include inequivalent outer (OP) and inner (IP) CuO2 planes in a unit cell with number of planes n = 3-5. Using an experimental relation between the spin part of Knight shift (Ks) and the carrier concentration (Nh) reported in n = 1 and 2 cuprates, the local carrier concentrations Nh(OP) in the OP and Nh(IP) in the IP have been deduced. We have found that Nh(OP) is larger than Nh(IP) in all the systems. The difference in the doping level increases as total-carrier content δ and n increase. Imbalance between Nh(OP) and Nh(IP) is suggested to be caused by a mechanism that the electrostatic potential associated with the apical oxygen has more attraction for holes in the OP than in the IP. It is also suggested that Tc of Hg1223 (n = 3) is the highest (Tc = 133 K) to date, due to Nh(IP) optimized to Nh,optimum to approximately 0.2. From the fact that Nh(OP)>Nh,optimum, we propose that if Nh(OP) could also be optimized in addition to optimized Nh(IP), Tc might be raised higher than 133 K.
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U2 - 10.1016/S0022-3697(00)00122-0
DO - 10.1016/S0022-3697(00)00122-0
M3 - Article
AN - SCOPUS:0034817899
VL - 62
SP - 171
EP - 175
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 1-2
ER -