Negative magnetoresistance suppressed through a topological phase transition in (Cd1-xZnx)3As2 thin films

S. Nishihaya, M. Uchida, Y. Nakazawa, K. Akiba, M. Kriener, Y. Kozuka, A. Miyake, Y. Taguchi, M. Tokunaga, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit.

Original languageEnglish
Article number245103
JournalPhysical Review B
Issue number24
Publication statusPublished - Jun 5 2018
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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