Negative magnetoresistance suppressed through a topological phase transition in (Cd1-xZnx)3As2 thin films

S. Nishihaya, M. Uchida, Y. Nakazawa, Kazuto Akiba, M. Kriener, Y. Kozuka, A. Miyake, Y. Taguchi, M. Tokunaga, M. Kawasaki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit.

Original languageEnglish
Article number245103
JournalPhysical Review B
Volume97
Issue number24
DOIs
Publication statusPublished - Jun 5 2018
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Nishihaya, S., Uchida, M., Nakazawa, Y., Akiba, K., Kriener, M., Kozuka, Y., Miyake, A., Taguchi, Y., Tokunaga, M., & Kawasaki, M. (2018). Negative magnetoresistance suppressed through a topological phase transition in (Cd1-xZnx)3As2 thin films. Physical Review B, 97(24), [245103]. https://doi.org/10.1103/PhysRevB.97.245103