Negative-ion implantation technique

Junzo Ishikawa, Hiroshi Tsuji, Yoshitaka Toyota, Yasuhito Gotoh, Koji Matsuda, Masayasu Tanjyo, Shigeki Sakai

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Abstract

Negative-ion implantation is a promising technique for charging-free implantation for the forthcoming ULSI fabrication, in which the water charging by positive-ion implantation will become a troublesome problem even with an electron shower. The negative-ion implantation technique remarkably ameliorates such a charging problem since the incoming negative charge of implanted negative ions is easily balanced by the outgoing negative charge of a part of secondary electrons. Thus, the surface charging voltage is maintained to within about ± 10 V for isolated conducting materials and insulators, and is free from space and time fluctuations. A high-current negative-ion source and a medium current negative-ion implanter developed for this technique are described with the design concepts. In addition, the fundamental measurements of interactions between the negative-ion beam and the gas/solid are also described.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume96
Issue number1-2
DOIs
Publication statusPublished - Mar 1 1995
Externally publishedYes

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Ishikawa, J., Tsuji, H., Toyota, Y., Gotoh, Y., Matsuda, K., Tanjyo, M., & Sakai, S. (1995). Negative-ion implantation technique. Nuclear Inst. and Methods in Physics Research, B, 96(1-2), 7-12. https://doi.org/10.1016/0168-583X(94)00444-7