Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki, Takayoshi Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

Research output: Contribution to journalArticle

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Abstract

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

Original languageEnglish
Pages (from-to)2978-2981
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number12
DOIs
Publication statusPublished - Dec 2008

Fingerprint

Diamond
Boron
Electronic structure
Diamonds
boron
diamonds
Photoelectron spectroscopy
electronic structure
Brillouin zones
photoelectric emission
X rays
Superconducting films
Fermi surface
Diamond films
Valence bands
Fermi level
diamond films
spectroscopy
Fermi surfaces
Carrier concentration

Keywords

  • C. Photoelectron spectroscopy
  • D. Electronic structure
  • D. Fermi surface
  • D. Superconductivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

Cite this

Near EF electronic structure of heavily boron-doped superconducting diamond. / Okazaki, H.; Yokoya, Takayoshi; Nakamura, J.; Yamada, N.; Nakamura, T.; Muro, T.; Tamenori, Y.; Matsushita, T.; Takata, Y.; Tokushima, T.; Shin, S.; Takano, Y.; Nagao, M.; Takenouchi, T.; Kawarada, H.; Oguchi, T.

In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 12, 12.2008, p. 2978-2981.

Research output: Contribution to journalArticle

Okazaki, H, Yokoya, T, Nakamura, J, Yamada, N, Nakamura, T, Muro, T, Tamenori, Y, Matsushita, T, Takata, Y, Tokushima, T, Shin, S, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2008, 'Near EF electronic structure of heavily boron-doped superconducting diamond', Journal of Physics and Chemistry of Solids, vol. 69, no. 12, pp. 2978-2981. https://doi.org/10.1016/j.jpcs.2008.06.006
Okazaki, H. ; Yokoya, Takayoshi ; Nakamura, J. ; Yamada, N. ; Nakamura, T. ; Muro, T. ; Tamenori, Y. ; Matsushita, T. ; Takata, Y. ; Tokushima, T. ; Shin, S. ; Takano, Y. ; Nagao, M. ; Takenouchi, T. ; Kawarada, H. ; Oguchi, T. / Near EF electronic structure of heavily boron-doped superconducting diamond. In: Journal of Physics and Chemistry of Solids. 2008 ; Vol. 69, No. 12. pp. 2978-2981.
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