Narrow carrier concentration range of superconductivity and critical point of pseudogap formation temperature in Pb-substituted Bi 2Sr 2CuO 6+δ

Kazutaka Kudo, Naoyuki Okumura, Yoshiyuki Miyoshi, Terukazu Nishizaki, Takahiko Sasaki, Norio Kobayashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have determined the precise T-p phase diagram of Pb-substituted Bi 2Sr 2CuO 6+δ by using the hole concentration p estimated from the Hall coefficient, and found that the superconducting region of Pb-substituted Bi 2Sr 2CuO 6+δ is rather narrow as compared with other Bi-based high-T c cuprates. In Bi-based single-layer high-T c cuprates, the width of the superconducting region becomes more narrow as the maximum T c (T c,max) gets smaller. This is different from other high-T csuperconductors, in which T c/T c,max is described by a universal function of p. Furthermore, we have found that the p dependence of the pseudogap formation temperature T *projects to zero at the critical point p cr < 0.205{0.21, which is outside the superconducting region of Pb-substituted Bi 2Sr 2CuO 6+δ. Taking into account that p cr of high-T c cuprates is commonly located around p ∼ 0.19{0.21, it is concluded that whether p cr is inside or outside the superconducting region simply depends on the width of the superconducting region.

Original languageEnglish
Article number084722
Journaljournal of the physical society of japan
Volume78
Issue number8
DOIs
Publication statusPublished - Aug 1 2009
Externally publishedYes

Keywords

  • Bibased cuprates
  • Hall coefficient
  • Hole concentration
  • Pb-substituted Bi2Sr CuO
  • Phase diagram
  • Pseudogap

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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