Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

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129 Citations (Scopus)

Abstract

Linewidth fluctuation in resist patterns is a serious problem in electron beam nanolithography. We have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the result that their size depends on the polymer molecular weight. We also show that the linewidth fluctuation is reduced, though the developing rate is slow, when the pattern size is less than the aggregate size. The linewidth dependence of the fluctuation and of the developing rate can be explained by the influence of the resist polymer aggregate on the development behavior.

Original languageEnglish
Pages (from-to)2388-2390
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number16
DOIs
Publication statusPublished - Oct 20 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yamaguchi, T., Namatsu, H., Nagase, M., Yamazaki, K., & Kurihara, K. (1997). Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films. Applied Physics Letters, 71(16), 2388-2390. https://doi.org/10.1063/1.120037