Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Yamazaki; Kenji Kurihara

doi:10.1063/1.120037

Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kurihara

Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

131 Citations (Scopus)

Abstract

Linewidth fluctuation in resist patterns is a serious problem in electron beam nanolithography. We have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the result that their size depends on the polymer molecular weight. We also show that the linewidth fluctuation is reduced, though the developing rate is slow, when the pattern size is less than the aggregate size. The linewidth dependence of the fluctuation and of the developing rate can be explained by the influence of the resist polymer aggregate on the development behavior.

Original language	English
Pages (from-to)	2388-2390
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	16
DOIs	https://doi.org/10.1063/1.120037
Publication status	Published - Oct 20 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120037

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abstract = "Linewidth fluctuation in resist patterns is a serious problem in electron beam nanolithography. We have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the result that their size depends on the polymer molecular weight. We also show that the linewidth fluctuation is reduced, though the developing rate is slow, when the pattern size is less than the aggregate size. The linewidth dependence of the fluctuation and of the developing rate can be explained by the influence of the resist polymer aggregate on the development behavior.",

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AU - Yamaguchi, Toru

AU - Namatsu, Hideo

AU - Nagase, Masao

AU - Yamazaki, Kenji

AU - Kurihara, Kenji

PY - 1997/10/20

Y1 - 1997/10/20

N2 - Linewidth fluctuation in resist patterns is a serious problem in electron beam nanolithography. We have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the result that their size depends on the polymer molecular weight. We also show that the linewidth fluctuation is reduced, though the developing rate is slow, when the pattern size is less than the aggregate size. The linewidth dependence of the fluctuation and of the developing rate can be explained by the influence of the resist polymer aggregate on the development behavior.

AB - Linewidth fluctuation in resist patterns is a serious problem in electron beam nanolithography. We have observed granular structures with a diameter of 20-30 nm in resist films, and have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the result that their size depends on the polymer molecular weight. We also show that the linewidth fluctuation is reduced, though the developing rate is slow, when the pattern size is less than the aggregate size. The linewidth dependence of the fluctuation and of the developing rate can be explained by the influence of the resist polymer aggregate on the development behavior.

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Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films

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