Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

H. Namatsu, T. Yamaguchi, M. Nagase, K. Yamazaki, K. Kurihara

Research output: Contribution to journalArticlepeer-review

132 Citations (Scopus)

Abstract

A new resist system providing small linewidth fluctuation has been developed for nanolithography. Hydrogen silsesquioxane (HSQ) resist used here has a small polymer size because of its three-dimensional framework. This framework reduces the size of aggregates in the resist film which strongly influence linewidth fluctuation of resist patterns. The scission of SiH bonds in HSQ by e-beam leads to the crosslinking required for the nega-patterning. In addition, the application of a TMAH developer realizes higher contrast and less thickness loss. Consequently, 20-nm-wide nega-patterns with a rectangular cross-sectional shape are successfully formed with linewidth fluctuation less than 2 nm.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalMicroelectronic Engineering
Volume41-42
DOIs
Publication statusPublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations'. Together they form a unique fingerprint.

Cite this