N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara, K. Shibata, S. Fujiki, Yoshihiro Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro, K. Tanigaki

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.

Original languageEnglish
Pages (from-to)223-229
Number of pages7
JournalChemical Physics Letters
Volume379
Issue number3-4
DOIs
Publication statusPublished - Sep 26 2003

Fingerprint

Fullerenes
Logic gates
Field effect transistors
fullerenes
logic
field effect transistors
Thin films
Networks (circuits)
thin films
Thin film transistors
CMOS
Activation energy
Metals
activation energy
conduction
augmentation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit. / Kanbara, T.; Shibata, K.; Fujiki, S.; Kubozono, Yoshihiro; Kashino, S.; Urisu, T.; Sakai, M.; Fujiwara, A.; Kumashiro, R.; Tanigaki, K.

In: Chemical Physics Letters, Vol. 379, No. 3-4, 26.09.2003, p. 223-229.

Research output: Contribution to journalArticle

Kanbara, T, Shibata, K, Fujiki, S, Kubozono, Y, Kashino, S, Urisu, T, Sakai, M, Fujiwara, A, Kumashiro, R & Tanigaki, K 2003, 'N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit', Chemical Physics Letters, vol. 379, no. 3-4, pp. 223-229. https://doi.org/10.1016/j.cplett.2003.07.025
Kanbara, T. ; Shibata, K. ; Fujiki, S. ; Kubozono, Yoshihiro ; Kashino, S. ; Urisu, T. ; Sakai, M. ; Fujiwara, A. ; Kumashiro, R. ; Tanigaki, K. / N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit. In: Chemical Physics Letters. 2003 ; Vol. 379, No. 3-4. pp. 223-229.
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AU - Kashino, S.

AU - Urisu, T.

AU - Sakai, M.

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AU - Tanigaki, K.

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