N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara, K. Shibata, S. Fujiki, Y. Kubozono, S. Kashino, T. Urisu, M. Sakai, A. Fujiwara, R. Kumashiro, K. Tanigaki

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Abstract

N-channel field effect transistors (FETs) were fabricated with thin films of C60 and Dy@C82. A typical enhancement-type FET property was observed in C60 FET above 220 K. The mobility of C 60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C82 FET was found to be a normally-on type FET, which has a property different from that for C60 and C70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C60 and pentacene thin-film FETs.

Original languageEnglish
Pages (from-to)223-229
Number of pages7
JournalChemical Physics Letters
Volume379
Issue number3-4
DOIs
Publication statusPublished - Sep 26 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Kanbara, T., Shibata, K., Fujiki, S., Kubozono, Y., Kashino, S., Urisu, T., Sakai, M., Fujiwara, A., Kumashiro, R., & Tanigaki, K. (2003). N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit. Chemical Physics Letters, 379(3-4), 223-229. https://doi.org/10.1016/j.cplett.2003.07.025