Multiple-ISFET integrated with CMOS interface circuits

Keiji Tsukada, Takuya Maruizumi, Hiroyuki Miyagi

Research output: Contribution to journalArticle

Abstract

To achieve the simultaneous measurements of ion concentrations with high accuracy using multiple ISFETs, the integration of multiple ISFETs with signal processing circuits has been attempted. To achieve process matching in the fabrication of the ISFETs and additional circuits, and to lower the power consumption, CMOS devices have been used for the signal circuits. The integrated circuits were composed of four ISFETs, a constant current source, a buffer amplifier, and a multiplexer. To measure ion concentration at high speed with a high degree of accuracy, each ISFET contained a source follower and a buffer amplifier to achieve an independent operation. Only the output signal was switched by a multiplexer.

Original languageEnglish
Pages (from-to)93-99
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume71
Issue number12
Publication statusPublished - Dec 1988
Externally publishedYes

Fingerprint

Ion sensitive field effect transistors
CMOS
ion concentration
Buffer amplifiers
Networks (circuits)
buffers
amplifiers
integrated circuits
signal processing
high speed
Ions
fabrication
output
Integrated circuits
Signal processing
Electric power utilization
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Multiple-ISFET integrated with CMOS interface circuits. / Tsukada, Keiji; Maruizumi, Takuya; Miyagi, Hiroyuki.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 71, No. 12, 12.1988, p. 93-99.

Research output: Contribution to journalArticle

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