Multigate single-electron transistors and their application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.

Original languageEnglish
Pages (from-to)637-639
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
Publication statusPublished - Jan 31 2000
Externally publishedYes

Fingerprint

single electron transistors
high voltages
insulators
wafers
oxidation
electrodes
output
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (2000). Multigate single-electron transistors and their application to an exclusive-OR gate. Applied Physics Letters, 76(5), 637-639.

Multigate single-electron transistors and their application to an exclusive-OR gate. / Takahashi, Yasuo; Fujiwara, Akira; Yamazaki, Kenji; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

In: Applied Physics Letters, Vol. 76, No. 5, 31.01.2000, p. 637-639.

Research output: Contribution to journalArticle

Takahashi, Y, Fujiwara, A, Yamazaki, K, Namatsu, H, Kurihara, K & Murase, K 2000, 'Multigate single-electron transistors and their application to an exclusive-OR gate', Applied Physics Letters, vol. 76, no. 5, pp. 637-639.
Takahashi Y, Fujiwara A, Yamazaki K, Namatsu H, Kurihara K, Murase K. Multigate single-electron transistors and their application to an exclusive-OR gate. Applied Physics Letters. 2000 Jan 31;76(5):637-639.
Takahashi, Yasuo ; Fujiwara, Akira ; Yamazaki, Kenji ; Namatsu, Hideo ; Kurihara, Kenji ; Murase, Katsumi. / Multigate single-electron transistors and their application to an exclusive-OR gate. In: Applied Physics Letters. 2000 ; Vol. 76, No. 5. pp. 637-639.
@article{5bf3c3b7052d4be38e6f1c73056a47a4,
title = "Multigate single-electron transistors and their application to an exclusive-OR gate",
abstract = "The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.",
author = "Yasuo Takahashi and Akira Fujiwara and Kenji Yamazaki and Hideo Namatsu and Kenji Kurihara and Katsumi Murase",
year = "2000",
month = "1",
day = "31",
language = "English",
volume = "76",
pages = "637--639",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Multigate single-electron transistors and their application to an exclusive-OR gate

AU - Takahashi, Yasuo

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 2000/1/31

Y1 - 2000/1/31

N2 - The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.

AB - The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.

UR - http://www.scopus.com/inward/record.url?scp=0000769977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000769977&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000769977

VL - 76

SP - 637

EP - 639

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -