Multigate single-electron transistors and their application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalArticle

94 Citations (Scopus)

Abstract

The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.

Original languageEnglish
Pages (from-to)637-639
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number5
DOIs
Publication statusPublished - Jan 31 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (2000). Multigate single-electron transistors and their application to an exclusive-OR gate. Applied Physics Letters, 76(5), 637-639. https://doi.org/10.1063/1.125843