Multi-gate single-electron transistor and its application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages127-130
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 6 1998Dec 9 1998

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period12/6/9812/9/98

Fingerprint

Single electron transistors
Logic circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takahashi, Y., Fujiwara, A., Yamazaki, K., Namatsu, H., Kurihara, K., & Murase, K. (1998). Multi-gate single-electron transistor and its application to an exclusive-OR gate. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 127-130). IEEE.

Multi-gate single-electron transistor and its application to an exclusive-OR gate. / Takahashi, Yasuo; Fujiwara, Akira; Yamazaki, Kenji; Namatsu, Hideo; Kurihara, Kenji; Murase, Katsumi.

Technical Digest - International Electron Devices Meeting. ed. / Anon. IEEE, 1998. p. 127-130.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takahashi, Y, Fujiwara, A, Yamazaki, K, Namatsu, H, Kurihara, K & Murase, K 1998, Multi-gate single-electron transistor and its application to an exclusive-OR gate. in Anon (ed.), Technical Digest - International Electron Devices Meeting. IEEE, pp. 127-130, Proceedings of the 1998 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 12/6/98.
Takahashi Y, Fujiwara A, Yamazaki K, Namatsu H, Kurihara K, Murase K. Multi-gate single-electron transistor and its application to an exclusive-OR gate. In Anon, editor, Technical Digest - International Electron Devices Meeting. IEEE. 1998. p. 127-130
Takahashi, Yasuo ; Fujiwara, Akira ; Yamazaki, Kenji ; Namatsu, Hideo ; Kurihara, Kenji ; Murase, Katsumi. / Multi-gate single-electron transistor and its application to an exclusive-OR gate. Technical Digest - International Electron Devices Meeting. editor / Anon. IEEE, 1998. pp. 127-130
@inproceedings{5f43810eb0c64ea290e39070d68187f8,
title = "Multi-gate single-electron transistor and its application to an exclusive-OR gate",
abstract = "The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.",
author = "Yasuo Takahashi and Akira Fujiwara and Kenji Yamazaki and Hideo Namatsu and Kenji Kurihara and Katsumi Murase",
year = "1998",
language = "English",
pages = "127--130",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
publisher = "IEEE",

}

TY - GEN

T1 - Multi-gate single-electron transistor and its application to an exclusive-OR gate

AU - Takahashi, Yasuo

AU - Fujiwara, Akira

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

AU - Kurihara, Kenji

AU - Murase, Katsumi

PY - 1998

Y1 - 1998

N2 - The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

AB - The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

UR - http://www.scopus.com/inward/record.url?scp=0032254711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032254711&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032254711

SP - 127

EP - 130

BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - IEEE

ER -