Multi-gate single-electron transistor and its application to an exclusive-OR gate

Yasuo Takahashi, Akira Fujiwara, Kenji Yamazaki, Hideo Namatsu, Kenji Kurihara, Katsumi Murase

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The two-input exclusive-OR (XOR) gate function was implemented by a multi-gate single-electron transistor. Two types of devices with different gate configurations were fabricated and tested. XOR operations were successfully performed through current switching at 40 K. The device has striking features for reducing the number of devices in logic circuits.

Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 6 1998Dec 9 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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