Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress

Y. Kamiura, K. Fukuda, Yoshifumi Yamashita

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose a method to visualize the local motion of hydrogen in Si by combining deep-level transient spectroscopy (DLTS) under uniaxial stress with the technique of stress-induced alignment and subsequent relaxation of hydrogen-related complex defects. The model defect used is a hydrogen-carbon (H-C) complex, which has a donor level at Ec-0.15 eV in Si and can be detected by DLTS as an electron trap. The splitting behavior of the DLTS peak under compressive stresses to lift the orientational degeneracy is consistent with the atomic model in which the hydrogen atom occupies the bond-centered site between silicon and carbon atoms. We have observed the stress-induced alignment of the complex under a 〈1 1 0〉 stress of 1 GPa at 250-300 K and the subsequent relaxation of stress-induced alignment after removing the stress. This behavior can be understood as the motion of hydrogen under the stress from a high-energy bond to a low-energy bond with respect to the stress direction and the subsequent relaxing motion of hydrogen via bond-to-bond jumps under no stress. By controlling the charge state of the complex with and without applying reverse bias to the Schottky junction, we have found that the hydrogen motion is greatly influenced by the charge state of the complex and hydrogen moves more easily in the neutral charge state.

Original languageEnglish
Pages (from-to)122-127
Number of pages6
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - Mar 1 2000

Fingerprint

Deep level transient spectroscopy
Silicon
Hydrogen
silicon
hydrogen
spectroscopy
alignment
Carbon
Atoms
Electron traps
Defects
carbon
defects
Compressive stress
hydrogen atoms
traps
hydrogen bonds

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress. / Kamiura, Y.; Fukuda, K.; Yamashita, Yoshifumi.

In: Journal of Crystal Growth, Vol. 210, No. 1, 01.03.2000, p. 122-127.

Research output: Contribution to journalArticle

@article{57e1ec4fdd904b1c8e6861c0a0ff6a02,
title = "Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress",
abstract = "We propose a method to visualize the local motion of hydrogen in Si by combining deep-level transient spectroscopy (DLTS) under uniaxial stress with the technique of stress-induced alignment and subsequent relaxation of hydrogen-related complex defects. The model defect used is a hydrogen-carbon (H-C) complex, which has a donor level at Ec-0.15 eV in Si and can be detected by DLTS as an electron trap. The splitting behavior of the DLTS peak under compressive stresses to lift the orientational degeneracy is consistent with the atomic model in which the hydrogen atom occupies the bond-centered site between silicon and carbon atoms. We have observed the stress-induced alignment of the complex under a 〈1 1 0〉 stress of 1 GPa at 250-300 K and the subsequent relaxation of stress-induced alignment after removing the stress. This behavior can be understood as the motion of hydrogen under the stress from a high-energy bond to a low-energy bond with respect to the stress direction and the subsequent relaxing motion of hydrogen via bond-to-bond jumps under no stress. By controlling the charge state of the complex with and without applying reverse bias to the Schottky junction, we have found that the hydrogen motion is greatly influenced by the charge state of the complex and hydrogen moves more easily in the neutral charge state.",
author = "Y. Kamiura and K. Fukuda and Yoshifumi Yamashita",
year = "2000",
month = "3",
day = "1",
doi = "10.1016/S0022-0248(99)00664-8",
language = "English",
volume = "210",
pages = "122--127",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Motion of hydrogen in silicon revealed by deep-level transient spectroscopy under uniaxial stress

AU - Kamiura, Y.

AU - Fukuda, K.

AU - Yamashita, Yoshifumi

PY - 2000/3/1

Y1 - 2000/3/1

N2 - We propose a method to visualize the local motion of hydrogen in Si by combining deep-level transient spectroscopy (DLTS) under uniaxial stress with the technique of stress-induced alignment and subsequent relaxation of hydrogen-related complex defects. The model defect used is a hydrogen-carbon (H-C) complex, which has a donor level at Ec-0.15 eV in Si and can be detected by DLTS as an electron trap. The splitting behavior of the DLTS peak under compressive stresses to lift the orientational degeneracy is consistent with the atomic model in which the hydrogen atom occupies the bond-centered site between silicon and carbon atoms. We have observed the stress-induced alignment of the complex under a 〈1 1 0〉 stress of 1 GPa at 250-300 K and the subsequent relaxation of stress-induced alignment after removing the stress. This behavior can be understood as the motion of hydrogen under the stress from a high-energy bond to a low-energy bond with respect to the stress direction and the subsequent relaxing motion of hydrogen via bond-to-bond jumps under no stress. By controlling the charge state of the complex with and without applying reverse bias to the Schottky junction, we have found that the hydrogen motion is greatly influenced by the charge state of the complex and hydrogen moves more easily in the neutral charge state.

AB - We propose a method to visualize the local motion of hydrogen in Si by combining deep-level transient spectroscopy (DLTS) under uniaxial stress with the technique of stress-induced alignment and subsequent relaxation of hydrogen-related complex defects. The model defect used is a hydrogen-carbon (H-C) complex, which has a donor level at Ec-0.15 eV in Si and can be detected by DLTS as an electron trap. The splitting behavior of the DLTS peak under compressive stresses to lift the orientational degeneracy is consistent with the atomic model in which the hydrogen atom occupies the bond-centered site between silicon and carbon atoms. We have observed the stress-induced alignment of the complex under a 〈1 1 0〉 stress of 1 GPa at 250-300 K and the subsequent relaxation of stress-induced alignment after removing the stress. This behavior can be understood as the motion of hydrogen under the stress from a high-energy bond to a low-energy bond with respect to the stress direction and the subsequent relaxing motion of hydrogen via bond-to-bond jumps under no stress. By controlling the charge state of the complex with and without applying reverse bias to the Schottky junction, we have found that the hydrogen motion is greatly influenced by the charge state of the complex and hydrogen moves more easily in the neutral charge state.

UR - http://www.scopus.com/inward/record.url?scp=0033906371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033906371&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00664-8

DO - 10.1016/S0022-0248(99)00664-8

M3 - Article

AN - SCOPUS:0033906371

VL - 210

SP - 122

EP - 127

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -