Monolithic pixel detector in a 0.15μm SOI technology

Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, Hirokazu Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. IdaH. Hayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium Conference Record
Pages1440-1444
Number of pages5
Volume3
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD - San Diego, CA, United States
Duration: Oct 29 2006Nov 4 2006

Other

Other2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD
CountryUnited States
CitySan Diego, CA
Period10/29/0611/4/06

Fingerprint

Silicon on insulator technology
Pixels
Detectors
Diodes
Silicon
Electrodes
Networks (circuits)
Sensors
Substrates
Processing

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering

Cite this

Arai, Y., Hazumi, M., Ikegami, Y., Kohriki, T., Tajima, O., Terada, S., ... Hayashi, H. (2007). Monolithic pixel detector in a 0.15μm SOI technology. In IEEE Nuclear Science Symposium Conference Record (Vol. 3, pp. 1440-1444). [4179284] https://doi.org/10.1109/NSSMIC.2006.354171

Monolithic pixel detector in a 0.15μm SOI technology. / Arai, Y.; Hazumi, M.; Ikegami, Y.; Kohriki, T.; Tajima, O.; Terada, S.; Tsuboyama, T.; Unno, Y.; Ushiroda, H.; Ikeda, H.; Hara, K.; Ishino, Hirokazu; Kawasaki, T.; Martin, E.; Varner, G.; Tajima, H.; Ohno, M.; Fukuda, K.; Komatsubara, H.; Ida, J.; Hayashi, H.

IEEE Nuclear Science Symposium Conference Record. Vol. 3 2007. p. 1440-1444 4179284.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arai, Y, Hazumi, M, Ikegami, Y, Kohriki, T, Tajima, O, Terada, S, Tsuboyama, T, Unno, Y, Ushiroda, H, Ikeda, H, Hara, K, Ishino, H, Kawasaki, T, Martin, E, Varner, G, Tajima, H, Ohno, M, Fukuda, K, Komatsubara, H, Ida, J & Hayashi, H 2007, Monolithic pixel detector in a 0.15μm SOI technology. in IEEE Nuclear Science Symposium Conference Record. vol. 3, 4179284, pp. 1440-1444, 2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD, San Diego, CA, United States, 10/29/06. https://doi.org/10.1109/NSSMIC.2006.354171
Arai Y, Hazumi M, Ikegami Y, Kohriki T, Tajima O, Terada S et al. Monolithic pixel detector in a 0.15μm SOI technology. In IEEE Nuclear Science Symposium Conference Record. Vol. 3. 2007. p. 1440-1444. 4179284 https://doi.org/10.1109/NSSMIC.2006.354171
Arai, Y. ; Hazumi, M. ; Ikegami, Y. ; Kohriki, T. ; Tajima, O. ; Terada, S. ; Tsuboyama, T. ; Unno, Y. ; Ushiroda, H. ; Ikeda, H. ; Hara, K. ; Ishino, Hirokazu ; Kawasaki, T. ; Martin, E. ; Varner, G. ; Tajima, H. ; Ohno, M. ; Fukuda, K. ; Komatsubara, H. ; Ida, J. ; Hayashi, H. / Monolithic pixel detector in a 0.15μm SOI technology. IEEE Nuclear Science Symposium Conference Record. Vol. 3 2007. pp. 1440-1444
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