Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response

Akira Kishimoto, A. Nakamichi, Y. Nakamura

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined.

Original languageEnglish
Pages (from-to)4233-4237
Number of pages5
JournalJournal of Materials Science
Volume34
Issue number17
DOIs
Publication statusPublished - 1999
Externally publishedYes

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Bending (deformation)
Indentation
Monitoring
Cracks
Crack propagation
Single crystals
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response. / Kishimoto, Akira; Nakamichi, A.; Nakamura, Y.

In: Journal of Materials Science, Vol. 34, No. 17, 1999, p. 4233-4237.

Research output: Contribution to journalArticle

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