Abstract
We report a Cu K-edge resonant inelastic X-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap excitation in undoped insulators is found to commonly show a larger dispersion along the [π, π] direction than the [π, 0] direction. On the other hand, the resonance condition displays material dependence. The Mott gap persists in carrier-doped states. Upon hole doping, the dispersion of the Mott gap excitation becomes weaker associated with the reduction of antiferromagnetic correlation and an intraband excitation appears as a continuum intensity below the gap at the same time. In the case of electron doping, the Mott gap excitation is prominent at the zone center and a dispersive intraband excitation is observed at finite momentum transfer.
Original language | English |
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Pages (from-to) | 3118-3124 |
Number of pages | 7 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 69 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2008 |
Externally published | Yes |
Keywords
- A. Oxides
- A. Superconductors
- D. Electronic structure
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics