Molecular weight effect on line-edge roughness

Toru Yamaguchi, Kenji Yamazaki, Hideo Namatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsT.H. Fedynyshyn
Pages1212-1219
Number of pages8
Volume5039 II
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventAdvances in Resist Technology and Processing XX - Santa Clara, CA, United States
Duration: Feb 24 2003Feb 26 2003

Other

OtherAdvances in Resist Technology and Processing XX
CountryUnited States
CitySanta Clara, CA
Period2/24/032/26/03

Fingerprint

molecular weight
roughness
Surface roughness
Molecular weight
low molecular weights
image contrast
dosage
Electron beams
electron beams

Keywords

  • Electron-beam lithography
  • Image contrast
  • LER
  • Polymer aggregates
  • Positive-tone resist
  • Roughness
  • ZEP

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yamaguchi, T., Yamazaki, K., & Namatsu, H. (2003). Molecular weight effect on line-edge roughness. In T. H. Fedynyshyn (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5039 II, pp. 1212-1219) https://doi.org/10.1117/12.485049

Molecular weight effect on line-edge roughness. / Yamaguchi, Toru; Yamazaki, Kenji; Namatsu, Hideo.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / T.H. Fedynyshyn. Vol. 5039 II 2003. p. 1212-1219.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, T, Yamazaki, K & Namatsu, H 2003, Molecular weight effect on line-edge roughness. in TH Fedynyshyn (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5039 II, pp. 1212-1219, Advances in Resist Technology and Processing XX, Santa Clara, CA, United States, 2/24/03. https://doi.org/10.1117/12.485049
Yamaguchi T, Yamazaki K, Namatsu H. Molecular weight effect on line-edge roughness. In Fedynyshyn TH, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5039 II. 2003. p. 1212-1219 https://doi.org/10.1117/12.485049
Yamaguchi, Toru ; Yamazaki, Kenji ; Namatsu, Hideo. / Molecular weight effect on line-edge roughness. Proceedings of SPIE - The International Society for Optical Engineering. editor / T.H. Fedynyshyn. Vol. 5039 II 2003. pp. 1212-1219
@inproceedings{b1c690bb8c1a4e7e85a9d7e6beb82e06,
title = "Molecular weight effect on line-edge roughness",
abstract = "The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.",
keywords = "Electron-beam lithography, Image contrast, LER, Polymer aggregates, Positive-tone resist, Roughness, ZEP",
author = "Toru Yamaguchi and Kenji Yamazaki and Hideo Namatsu",
year = "2003",
doi = "10.1117/12.485049",
language = "English",
volume = "5039 II",
pages = "1212--1219",
editor = "T.H. Fedynyshyn",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Molecular weight effect on line-edge roughness

AU - Yamaguchi, Toru

AU - Yamazaki, Kenji

AU - Namatsu, Hideo

PY - 2003

Y1 - 2003

N2 - The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

AB - The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

KW - Electron-beam lithography

KW - Image contrast

KW - LER

KW - Polymer aggregates

KW - Positive-tone resist

KW - Roughness

KW - ZEP

UR - http://www.scopus.com/inward/record.url?scp=0141722622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141722622&partnerID=8YFLogxK

U2 - 10.1117/12.485049

DO - 10.1117/12.485049

M3 - Conference contribution

VL - 5039 II

SP - 1212

EP - 1219

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Fedynyshyn, T.H.

ER -