Molecular weight effect on line-edge roughness

Toru Yamaguchi, Kenji Yamazaki, Hideo Namatsu

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions; This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.

Original languageEnglish
Pages (from-to)1212-1219
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5039 II
DOIs
Publication statusPublished - Oct 1 2003
EventAdvances in Resist Technology and Processing XX - Santa Clara, CA, United States
Duration: Feb 24 2003Feb 26 2003

Keywords

  • Electron-beam lithography
  • Image contrast
  • LER
  • Polymer aggregates
  • Positive-tone resist
  • Roughness
  • ZEP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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