Molecular dynamics study on dielectric properties of silicon oxynitride

Composition and microstructure dependence

Munemasa Tomita, Kenji Tsuruta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.

Original languageEnglish
Title of host publicationKey Engineering Materials
Pages287-290
Number of pages4
Volume485
DOIs
Publication statusPublished - 2011
Event30th Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan
Duration: Oct 29 2010Oct 30 2010

Publication series

NameKey Engineering Materials
Volume485
ISSN (Print)10139826

Other

Other30th Electronics Division Meeting of the Ceramic Society of Japan
CountryJapan
CityTokyo
Period10/29/1010/30/10

Fingerprint

Silicon
Dielectric properties
Molecular dynamics
Permittivity
Atoms
Microstructure
Chemical analysis
Nitrogen
Computer simulation

Keywords

  • Dielectric property
  • Molecular dynamics
  • Silicon oxynitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Molecular dynamics study on dielectric properties of silicon oxynitride : Composition and microstructure dependence. / Tomita, Munemasa; Tsuruta, Kenji.

Key Engineering Materials. Vol. 485 2011. p. 287-290 (Key Engineering Materials; Vol. 485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tomita, M & Tsuruta, K 2011, Molecular dynamics study on dielectric properties of silicon oxynitride: Composition and microstructure dependence. in Key Engineering Materials. vol. 485, Key Engineering Materials, vol. 485, pp. 287-290, 30th Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 10/29/10. https://doi.org/10.4028/www.scientific.net/KEM.485.287
Tomita, Munemasa ; Tsuruta, Kenji. / Molecular dynamics study on dielectric properties of silicon oxynitride : Composition and microstructure dependence. Key Engineering Materials. Vol. 485 2011. pp. 287-290 (Key Engineering Materials).
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