Molecular dynamics study on dielectric properties of silicon oxynitride: Composition and microstructure dependence

Munemasa Tomita, Kenji Tsuruta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.

Original languageEnglish
Title of host publicationElectroceramics in Japan XIV
PublisherTrans Tech Publications Ltd
Pages287-290
Number of pages4
ISBN (Print)9783037851821
DOIs
Publication statusPublished - Jan 1 2011

Publication series

NameKey Engineering Materials
Volume485
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Dielectric property
  • Molecular dynamics
  • Silicon oxynitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Tomita, M., & Tsuruta, K. (2011). Molecular dynamics study on dielectric properties of silicon oxynitride: Composition and microstructure dependence. In Electroceramics in Japan XIV (pp. 287-290). (Key Engineering Materials; Vol. 485). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.485.287