Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal

Kenji Harafuji, Taku Tsuchiya, Katsuyuki Kawamura

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

The melting point of wurtzite-type GaN crystals was investigated by a two-phase molecular dynamics (MD) simulation of coexisting solid and liquid. The movement of the interface between the solid and liquid was examined to determine the melting point during the simulation. The initial solid crystal melts at 3200 K when the solid temperature is increased. It was found that the initial amorphous state at high temperature was maintained up to 300 K when the liquid was gradually cooled.

Original languageEnglish
Pages (from-to)2501-2512
Number of pages12
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
Publication statusPublished - Sep 1 2004
Externally publishedYes

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wurtzite
melting points
molecular dynamics
crystals
liquids
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal. / Harafuji, Kenji; Tsuchiya, Taku; Kawamura, Katsuyuki.

In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2501-2512.

Research output: Contribution to journalArticle

Harafuji, Kenji ; Tsuchiya, Taku ; Kawamura, Katsuyuki. / Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 5. pp. 2501-2512.
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