A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.
ASJC Scopus subject areas
- Physics and Astronomy(all)