Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

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1 Citation (Scopus)

Abstract

A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.

Original languageEnglish
Article number08JG03
JournalJapanese journal of applied physics
Volume50
Issue number8 PART 2
DOIs
Publication statusPublished - Aug 1 2011

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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