Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

Abstract

A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.

Original languageEnglish
Article number08JG03
JournalJapanese Journal of Applied Physics
Volume50
Issue number8 PART 2
DOIs
Publication statusPublished - Aug 2011
Externally publishedYes

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Chlorine
chlorine
Sputtering
Molecular dynamics
sputtering
molecular dynamics
Crystals
Ions
crystals
ions
products
wurtzite
escape
incidence
Atoms
Computer simulation
atoms
simulation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal. / Harafuji, Kenji; Kawamura, Katsuyuki.

In: Japanese Journal of Applied Physics, Vol. 50, No. 8 PART 2, 08JG03, 08.2011.

Research output: Contribution to journalArticle

@article{865c6f45e907459ca912ade3b58413cc,
title = "Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal",
abstract = "A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.",
author = "Kenji Harafuji and Katsuyuki Kawamura",
year = "2011",
month = "8",
doi = "10.1143/JJAP.50.08JG03",
language = "English",
volume = "50",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",
number = "8 PART 2",

}

TY - JOUR

T1 - Molecular dynamics of ion incident angle dependence of sputtering yield in chlorine-adsorbed GaN crystal

AU - Harafuji, Kenji

AU - Kawamura, Katsuyuki

PY - 2011/8

Y1 - 2011/8

N2 - A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.

AB - A molecular dynamics simulation has been carried out to investigate the dependence of chemical sputtering yield on the ion incident angle in the wurtzite-type GaN(0001) surface with a Cl-adsorbed layer. The sputtering yields of both Ga and N atoms show only a weak dependence on ion incident angle for the range of 60 to 90° (normal incidence). Ga is chemically sputtered mostly in the form of Ga-Cl2, and sometimes in the form of Ga-Cl, Ga-Cl 3, GaxNy, and GaxN yClz. These products escape from the surface in the time range of mainly 200-500fs after the impact of the incident Ar ion. There are small amounts of products escaping in the time range of 500-5000fs.

UR - http://www.scopus.com/inward/record.url?scp=80051988014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051988014&partnerID=8YFLogxK

U2 - 10.1143/JJAP.50.08JG03

DO - 10.1143/JJAP.50.08JG03

M3 - Article

AN - SCOPUS:80051988014

VL - 50

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JG03

ER -