Molecular arrangement and electronic band structure of θ-(BEDT-TTF) 2CsZn(SCN)4 controlled by uniaxial compression

R. Kondo, M. Higa, S. Kagoshima, H. Hoshino, T. Mori, H. Mori

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using the uniaxial strain method, the lattice parameters and the atomic positions of the quasi-two-dimensional organic conductor θ-(BEDT-TTF)2CsZn(SCN)4 were measured at room temperature with piston pressures up to 10 kbar applied parallel to the c-axis in the conducting plane. The lattice parameter c was predominantly reduced with increasing the piston pressure although a small Poisson's effect occurred in the parameter a. Band calculation showed that the transfer integrals under the uniaxial compression by the piston pressure of 10 kbar became similar to those of θ-(BEDT-TTF)2 RbZn(SCN)4. This result is consistent with that of transport measurements reported already and suggests that a charge disproportionation, which has been observed in the RbZn-compound, occurs also in the present compound under the uniaxial compressive strain.

Original languageEnglish
Pages (from-to)484-487
Number of pages4
JournalCurrent Applied Physics
Volume4
Issue number5
DOIs
Publication statusPublished - Aug 1 2004
Externally publishedYes

Keywords

  • Crystal structure
  • Electronic structure
  • Organic conductor
  • Transport properties
  • Uniaxial compression
  • Uniaxial strain

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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