Abstract
Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with postgrowth Ar-H2 plasma irradiation. The Ar-H2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film.
| Original language | English |
|---|---|
| Pages (from-to) | 733-737 |
| Number of pages | 5 |
| Journal | Physics of the Solid State |
| Volume | 46 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2004 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Modification of the physical properties of chemical vapor-deposited nanostructure diamond by argon-hydrogen plasma surface treatment. / Hayashi, Yasuhiko; Mori, D.; Soga, T.; Jimbo, T.
In: Physics of the Solid State, Vol. 46, No. 4, 04.2004, p. 733-737.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modification of the physical properties of chemical vapor-deposited nanostructure diamond by argon-hydrogen plasma surface treatment
AU - Hayashi, Yasuhiko
AU - Mori, D.
AU - Soga, T.
AU - Jimbo, T.
PY - 2004/4
Y1 - 2004/4
N2 - Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with postgrowth Ar-H2 plasma irradiation. The Ar-H2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film.
AB - Nanostructure diamond (NSD) film with a hardness as high as 70 GPa and an average surface roughness of 10 nm has been synthesized by the two-step negative substrate bias method combined with postgrowth Ar-H2 plasma irradiation. The Ar-H2 plasma irradiation has been confirmed to improve the uniformity of grain size and shape and increase the hardness of the NSD film.
UR - http://www.scopus.com/inward/record.url?scp=2442487599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442487599&partnerID=8YFLogxK
U2 - 10.1134/1.1711461
DO - 10.1134/1.1711461
M3 - Article
AN - SCOPUS:2442487599
VL - 46
SP - 733
EP - 737
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 4
ER -