Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Akira Sasaki; Katsunobu Nishihara; Atsushi Sunahara; Hiroyuki Furukawa; Takeshi Nishikawa; Fumihiro Koike

doi:10.1117/12.846467

Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Akira Sasaki, Katsunobu Nishihara, Atsushi Sunahara, Hiroyuki Furukawa, Takeshi Nishikawa, Fumihiro Koike

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography
DOIs	https://doi.org/10.1117/12.846467
Publication status	Published - Jun 17 2010
Event	Extreme Ultraviolet (EUV) Lithography - San Jose, CA, United States Duration: Feb 22 2010 → Feb 25 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7636
ISSN (Print)	0277-786X

Other

Other	Extreme Ultraviolet (EUV) Lithography
Country/Territory	United States
City	San Jose, CA
Period	2/22/10 → 2/25/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.846467

Cite this

Sasaki, A, Nishihara, K, Sunahara, A, Furukawa, H, Nishikawa, T & Koike, F 2010, Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source. in Extreme Ultraviolet (EUV) Lithography., 76363D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7636, Extreme Ultraviolet (EUV) Lithography, San Jose, CA, United States, 2/22/10. https://doi.org/10.1117/12.846467

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abstract = "We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.",

author = "Akira Sasaki and Katsunobu Nishihara and Atsushi Sunahara and Hiroyuki Furukawa and Takeshi Nishikawa and Fumihiro Koike",

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AU - Sasaki, Akira

AU - Nishihara, Katsunobu

AU - Sunahara, Atsushi

AU - Furukawa, Hiroyuki

AU - Nishikawa, Takeshi

AU - Koike, Fumihiro

PY - 2010/6/17

Y1 - 2010/6/17

N2 - We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

AB - We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

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DO - 10.1117/12.846467

M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Extreme Ultraviolet (EUV) Lithography

T2 - Extreme Ultraviolet (EUV) Lithography

Y2 - 22 February 2010 through 25 February 2010

ER -

Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Abstract

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