Modeling of atomic and plasmas processes in the LPP and LA-DPP EUV source

Akira Sasaki, Katsunobu Nishihara, Atsushi Sunahara, Hiroyuki Furukawa, Takeshi Nishikawa, Fumihiro Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We show an atomic model of Sn for the EUV sources. We show an improvement of the model in terms of the selection of energy levels and correction of the wavelength of the emission lines including resonance and satellite lines of combined 4d-4f and 4p-4d transition arrays. Calculated spectrum agrees well with experiments, showing that the present model is useful both for theoretical investigation of the optimum conditions the EUV sources, and for the analysis of experimental spectrum. A modeling method to estimate the initial spatial profile of the discharge path for the analysis of laser-assisted discharge pumped plasma sources is also proposed.

Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography
Publication statusPublished - Jun 17 2010
EventExtreme Ultraviolet (EUV) Lithography - San Jose, CA, United States
Duration: Feb 22 2010Feb 25 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherExtreme Ultraviolet (EUV) Lithography
Country/TerritoryUnited States
CitySan Jose, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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