Microstructure of Nd-Ga-O3 new seed layer for LPE growth of YBCO film

Seok Beom Kim, Sang Im Yoo, Yasuji Yamada

Research output: Contribution to journalArticle

Abstract

The microstructure and crystallization mechanism of NdGaO3 (NGO) new seed layer for liquid phase epitaxy (LPE) growth of YBa2Cu3O7-δ (YBCO) were revealed using high resolution SEM and TEM. NGO layer deposited by PLD at room temperature shows that very porous and columnar structure and this layer indicated amorphous by x-ray analysis. Amorphous NGO layer was crystallized with good in-plane and out of plane orientations keeping columnar structure by simple post annealing process. Biaxially aligned YBCO thick films were successfully fabricated on oriented novel porous NGO new seed layer. Although many cracks were observed for normally LPE grown YBCO films on NGO(110) single crystalline substrate, it was crack-free formed on porous NGO(100) film.

Original languageEnglish
Pages (from-to)2571-2574
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume13
Issue number2 III
DOIs
Publication statusPublished - Jun 2003
Externally publishedYes

Fingerprint

Liquid phase epitaxy
liquid phase epitaxy
Seed
seeds
Cracks
microstructure
Microstructure
Pulsed laser deposition
Thick films
Crystallization
Annealing
Crystalline materials
Transmission electron microscopy
X rays
cracks
Scanning electron microscopy
Substrates
x ray analysis
thick films
Temperature

Keywords

  • LPE
  • NdGaO
  • PLD
  • YBCO film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Microstructure of Nd-Ga-O3 new seed layer for LPE growth of YBCO film. / Kim, Seok Beom; Yoo, Sang Im; Yamada, Yasuji.

In: IEEE Transactions on Applied Superconductivity, Vol. 13, No. 2 III, 06.2003, p. 2571-2574.

Research output: Contribution to journalArticle

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