Metal-semiconductor transition in novel layered oxychalcogenides

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3 Citations (Scopus)

Abstract

Magnetic and electrical properties were characterized for newly synthesized La1-xSrxOCuSe (0<x<0.25) and La 1-xBaxOCuTe (0<x<0.3). Magnetic measurement showed paramagnetic behavior, but it did not obey the Curie-Weiss law, and an ordered phase was not observed down to 1.8 K in the Se and Te systems. The electrical properties of La1-xSrxOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La 0.8Sr0.2OCuSe was 209 S cm-1 at room temperature. In La1-xBaxOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.

Original languageEnglish
Pages (from-to)6-8
Number of pages3
JournalScience and Technology of Advanced Materials
Volume7
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

Keywords

  • Electrical resistivity
  • Metal-semiconductor transition
  • Oxychalcogenide
  • Susceptibility

ASJC Scopus subject areas

  • Materials Science(all)

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