Metal-semiconductor transition in novel layered oxychalcogenides

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Magnetic and electrical properties were characterized for newly synthesized La1-xSrxOCuSe (01-xBaxOCuTe (01-xSrxOCuSe indicated a metal-semiconductor transition at approximately x=0.05 and a metallic state of a higher concentration range x. The electrical conductivity of La 0.8Sr0.2OCuSe was 209 S cm-1 at room temperature. In La1-xBaxOCuTe, electrical resistivity systematically decreased with increasing x and semiconductive behavior was observed for all x values. Metal-semiconductor transition is probably caused by the degree of orientation and difference of acceptor levels in this system.

Original languageEnglish
Pages (from-to)6-8
Number of pages3
JournalScience and Technology of Advanced Materials
Volume7
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

Fingerprint

Metals
Semiconductor materials
Magnetic properties
Electric properties
Temperature
Electric Conductivity

Keywords

  • Electrical resistivity
  • Metal-semiconductor transition
  • Oxychalcogenide
  • Susceptibility

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Metal-semiconductor transition in novel layered oxychalcogenides. / Horigane, Kazumasa; Akimitsu, Jun.

In: Science and Technology of Advanced Materials, Vol. 7, No. 1 SPEC. ISS., 01.2006, p. 6-8.

Research output: Contribution to journalArticle

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