Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates

Y. Muraoka, Z. Hiroi

Research output: Contribution to journalArticlepeer-review

424 Citations (Scopus)


The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

Original languageEnglish
Pages (from-to)583-585
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - Jan 28 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Metal-insulator transition of VO<sub>2</sub> thin films grown on TiO <sub>2</sub> (001) and (110) substrates'. Together they form a unique fingerprint.

Cite this