Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates

Yuji Muraoka, Z. Hiroi

Research output: Contribution to journalArticle

359 Citations (Scopus)

Abstract

The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

Original languageEnglish
Pages (from-to)583-585
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number4
DOIs
Publication statusPublished - Jan 28 2002
Externally publishedYes

Fingerprint

insulators
thin films
metals
transition temperature
single crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates. / Muraoka, Yuji; Hiroi, Z.

In: Applied Physics Letters, Vol. 80, No. 4, 28.01.2002, p. 583-585.

Research output: Contribution to journalArticle

@article{0965aa91bf6a49fb844d6ccf03ac81d0,
title = "Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates",
abstract = "The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.",
author = "Yuji Muraoka and Z. Hiroi",
year = "2002",
month = "1",
day = "28",
doi = "10.1063/1.1446215",
language = "English",
volume = "80",
pages = "583--585",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Metal-insulator transition of VO2 thin films grown on TiO 2 (001) and (110) substrates

AU - Muraoka, Yuji

AU - Hiroi, Z.

PY - 2002/1/28

Y1 - 2002/1/28

N2 - The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

AB - The effect of uniaxial stress along the c axis on the metal-insulator transition of VO2 has been studied in the form of epitaxial thin films grown on TiO2 (001) and (110) substrates. A large reduction in the transition temperature TMI from 341 K for a single crystal to 300 K has been observed in the film on TiO2 (001) where the c-axis length is compressed owing to an epitaxial stress, while the TMI has been increased to 369 K in the film on TiO2 (110) where the c-axis length is expanded. The correlation between the c-axis length and TMI is suggested: the shorter c-axis length results in the lower TMI.

UR - http://www.scopus.com/inward/record.url?scp=79956019110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956019110&partnerID=8YFLogxK

U2 - 10.1063/1.1446215

DO - 10.1063/1.1446215

M3 - Article

AN - SCOPUS:79956019110

VL - 80

SP - 583

EP - 585

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -