Metal-insulator transition in the S = 1 2 spin ladder system (Sr0.4Ca0.6)14Cu24-xCoxO41-δ

M. Uehara, M. Ogawa, Jun Akimitsu

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We have found that the (Sr0.4Ca0.6)14Cu24-xCoxO41-δ system shows a metal-insulator transition at Co content x between 4.0 and 4.5 after high-pressure O2 annealing. For the as-sintered samples the T dependence of the electrical resistivities is semionductting over the whole x range and the associated activation energies systematically increase with increasing x. For the high-pressure O2 annealed samples the T dependence of the electrical resistivities is semiconducing, similar to the as-sintered ones at x below 3.8, whereas the electrical resistivities scarcely depend on the temperature variation with two types of small activation energies, ∼ 59 meV (200-100 K) and ∼ 2 meV (100-4.2 K) at x = 4.8. The behaviors of the electrical resistivities are characterized by the one-dimensional variable-range hopping scheme at a low-temperature region. These facts can be interpreted: the hole carriers beyond the capacity of the 1D CuO2 chain for trapping holes are released into the ladder by Co doping x above 2.9 under high-pressure O2 annealing (650°C, 8 MPa, 20 h).

Original languageEnglish
Pages (from-to)193-203
Number of pages11
JournalPhysica C: Superconductivity and its Applications
Volume255
Issue number3-4
DOIs
Publication statusPublished - Dec 15 1995
Externally publishedYes

Fingerprint

Metal insulator transition
Ladders
ladders
insulators
electrical resistivity
Activation energy
metals
Annealing
activation energy
annealing
Doping (additives)
Temperature
trapping
temperature

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Metal-insulator transition in the S = 1 2 spin ladder system (Sr0.4Ca0.6)14Cu24-xCoxO41-δ . / Uehara, M.; Ogawa, M.; Akimitsu, Jun.

In: Physica C: Superconductivity and its Applications, Vol. 255, No. 3-4, 15.12.1995, p. 193-203.

Research output: Contribution to journalArticle

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AB - We have found that the (Sr0.4Ca0.6)14Cu24-xCoxO41-δ system shows a metal-insulator transition at Co content x between 4.0 and 4.5 after high-pressure O2 annealing. For the as-sintered samples the T dependence of the electrical resistivities is semionductting over the whole x range and the associated activation energies systematically increase with increasing x. For the high-pressure O2 annealed samples the T dependence of the electrical resistivities is semiconducing, similar to the as-sintered ones at x below 3.8, whereas the electrical resistivities scarcely depend on the temperature variation with two types of small activation energies, ∼ 59 meV (200-100 K) and ∼ 2 meV (100-4.2 K) at x = 4.8. The behaviors of the electrical resistivities are characterized by the one-dimensional variable-range hopping scheme at a low-temperature region. These facts can be interpreted: the hole carriers beyond the capacity of the 1D CuO2 chain for trapping holes are released into the ladder by Co doping x above 2.9 under high-pressure O2 annealing (650°C, 8 MPa, 20 h).

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