TY - JOUR
T1 - Memristive Behavior in One-Dimensional Hexagonal Boron Nitride/Carbon Nanotube Heterostructure Assemblies
AU - Suzuki, Hiroo
AU - Kishibuchi, Misaki
AU - Shimogami, Kazuma
AU - Maetani, Mitsuaki
AU - Nasu, Kyohei
AU - Nakagawa, Tomohiro
AU - Tanaka, Yuichiro
AU - Inoue, Hirotaka
AU - Hayashi, Yasuhiko
N1 - Funding Information:
This work was supported in part by a grant-in-aid for Scientific Research (B) (grant no. 18H01708 and 21H01371), a grant-in-aid for Challenging Research (Exploratory) (grant no. 19K21946), a grant-in-aid for Scientific Research on Innovative Areas (Research in a proposed research area) (grant no. 19H05332), a grant-in-aid for Early-Career Scientists from JSPS KAKENHI (grant no. 21K14497), the Adaptable and Seamless Technology Transfer Program through Target-driven R&D (A-STEP) from the Japan Science and Technology Agency (JST) (grant nos. 1127647 and 1127666), the Sumitomo Foundation fiscal 2020 grant for basic science research projects, the Yazaki Memorial Foundation for Science and Technology, and the Sasakawa Scientific Research Grant from the Japan Science Society. We would like to thank Editage ( www.editage.com ) for English language editing.
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/8/24
Y1 - 2021/8/24
N2 - The van der Waals (VdW) heterostructure has attracted significant attention owing to its potential as a platform for unique physics and electronic device applications. Recently, a one-dimensional VdW (1D-VdW) heterostructure was achieved by the direct growth of two-dimensional materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenide on carbon nanotubes (CNTs). Despite its attractive configuration in terms of the possible high integration density of VdW heterojunctions, scaling up from individual nanostructures to bulk structures for actual applications remains unachieved. One possible strategy to fabricate the bulk-scale 1D-VdW heterostructure is the direct growth of heterogeneous materials on CNT assemblies. In the past decade, significant developments have been made in the dry spinning method to scale up CNTs to bulk structures while maintaining the clean surface of CNTs without any mixture. By combining the dry spinning technique and direct heterogeneous growth of hBN, we successfully achieved the bulk-scale integration of the hBN/CNT heterostructures with high controllability of crystallinity of the hBN layer. Through electric transport investigations, we found memristive behavior in hBN/CNT heterostructure assemblies. Through systematic experiments and structural observations, we propose a possible model for the mechanism of memristive behavior that originates from the one-dimensional growth of the hBN layer on the CNTs and functionalized amorphous carbon (a-C). The imperfect crystallinity of hBN with turbostratic layers and grain boundaries prepared by well-controlled growth may function as an appropriate barrier for the formation of a conductive filament channel, enhancing the memristive behavior. The hBN/CNT heterostructure assemblies with memristive functions and high mechanical degrees of freedom are extremely valuable for future neuromorphic computing and conventional nonvolatile memory devices.
AB - The van der Waals (VdW) heterostructure has attracted significant attention owing to its potential as a platform for unique physics and electronic device applications. Recently, a one-dimensional VdW (1D-VdW) heterostructure was achieved by the direct growth of two-dimensional materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenide on carbon nanotubes (CNTs). Despite its attractive configuration in terms of the possible high integration density of VdW heterojunctions, scaling up from individual nanostructures to bulk structures for actual applications remains unachieved. One possible strategy to fabricate the bulk-scale 1D-VdW heterostructure is the direct growth of heterogeneous materials on CNT assemblies. In the past decade, significant developments have been made in the dry spinning method to scale up CNTs to bulk structures while maintaining the clean surface of CNTs without any mixture. By combining the dry spinning technique and direct heterogeneous growth of hBN, we successfully achieved the bulk-scale integration of the hBN/CNT heterostructures with high controllability of crystallinity of the hBN layer. Through electric transport investigations, we found memristive behavior in hBN/CNT heterostructure assemblies. Through systematic experiments and structural observations, we propose a possible model for the mechanism of memristive behavior that originates from the one-dimensional growth of the hBN layer on the CNTs and functionalized amorphous carbon (a-C). The imperfect crystallinity of hBN with turbostratic layers and grain boundaries prepared by well-controlled growth may function as an appropriate barrier for the formation of a conductive filament channel, enhancing the memristive behavior. The hBN/CNT heterostructure assemblies with memristive functions and high mechanical degrees of freedom are extremely valuable for future neuromorphic computing and conventional nonvolatile memory devices.
KW - carbon nanotube (CNT)
KW - chemical vapor deposition (CVD)
KW - CNT yarn
KW - hexagonal boron nitride (hBN)
KW - memristor
KW - neuromorphic computing
KW - nonvolatile memory.
KW - van der Waals (VdW) heterostructure
UR - http://www.scopus.com/inward/record.url?scp=85113663214&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85113663214&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.1c00472
DO - 10.1021/acsaelm.1c00472
M3 - Article
AN - SCOPUS:85113663214
SN - 2637-6113
VL - 3
SP - 3555
EP - 3566
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 8
ER -