A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa).
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: May 25 2003 → May 30 2003
ASJC Scopus subject areas
- Condensed Matter Physics