Melting point of wurtzite-type GaN crystal

K. Harafuji, T. Tsuchiya, K. Kawamura

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa).

Original languageEnglish
Pages (from-to)2420-2423
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - Dec 1 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

ASJC Scopus subject areas

  • Condensed Matter Physics

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