Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode

T. Ohno, H. Fukano, Y. Muramoto, T. Ishibashi, T. Yoshimatsu, Y. Doi

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.

Original languageEnglish
Pages (from-to)375-377
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number3
DOIs
Publication statusPublished - Mar 1 2002
Externally publishedYes

Keywords

  • InGaAs
  • Intermodulation distortion
  • Nonlinearity
  • Optical receiver
  • Photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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