Manganese concentration and low-temperature annealing dependence of (formula presented) by x-ray absorption spectroscopy

Y. Ishiwata, M. Watanabe, Ritsuko Eguchi, T. Takeuchi, Y. Harada, A. Chainani, S. Shin, T. Hayashi, Y. Hashimoto, S. Katsumoto, Y. Iye

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Abstract

The Mn-site-projected electronic structure of the diluted magnetic semiconductors (formula presented) (formula presented) 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn (formula presented) absorption spectroscopy. The study exhibits coexistence of the ferromagnetic (formula presented) ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number23
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ishiwata, Y., Watanabe, M., Eguchi, R., Takeuchi, T., Harada, Y., Chainani, A., Shin, S., Hayashi, T., Hashimoto, Y., Katsumoto, S., & Iye, Y. (2002). Manganese concentration and low-temperature annealing dependence of (formula presented) by x-ray absorption spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 65(23), 1-4. https://doi.org/10.1103/PhysRevB.65.233201