Abstract
The Mn-site-projected electronic structure of the diluted magnetic semiconductors (formula presented) (formula presented) 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn (formula presented) absorption spectroscopy. The study exhibits coexistence of the ferromagnetic (formula presented) ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Fingerprint Dive into the research topics of 'Manganese concentration and low-temperature annealing dependence of (formula presented) by x-ray absorption spectroscopy'. Together they form a unique fingerprint.
Cite this
Ishiwata, Y., Watanabe, M., Eguchi, R., Takeuchi, T., Harada, Y., Chainani, A., Shin, S., Hayashi, T., Hashimoto, Y., Katsumoto, S., & Iye, Y. (2002). Manganese concentration and low-temperature annealing dependence of (formula presented) by x-ray absorption spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 65(23), 1-4. https://doi.org/10.1103/PhysRevB.65.233201