Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy

Y. Ishiwata, M. Watanabe, R. Eguchi, T. Takeuchi, Y. Harada, A. Chainani, S. Shin, T. Hayashi, Y. Hashimoto, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticle

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Abstract

The Mn-site-projected electronic structure of the diluted magnetic semiconductors Ga1-xMnxAs (x =0.032, 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature-(LT) annealed samples are systematically studied using high-resolution Mn 2p absorption spectroscopy. The study exhibits coexistence of the ferromagnetic Mn2+ ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.

Original languageEnglish
Article number233201
Pages (from-to)2332011-2332014
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number23
Publication statusPublished - Jun 15 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Ishiwata, Y., Watanabe, M., Eguchi, R., Takeuchi, T., Harada, Y., Chainani, A., Shin, S., Hayashi, T., Hashimoto, Y., Katsumoto, S., & Iye, Y. (2002). Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 65(23), 2332011-2332014. [233201].