The resistivity ρ and Hall resistivity ρH are measured on FeSe at pressures up to P=28.3 kbar in magnetic fields up to B=14.5 T. The ρ(B) and ρH(B) curves are analyzed with multicarrier models to estimate the carrier density and mobility as a function of P and temperature (T≤110 K). It is shown that the pressure-induced antiferromagnetic transition is accompanied by an abrupt reduction of the carrier density and scattering. This indicates that the electronic structure is reconstructed significantly by the antiferromagnetic order.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics