Abstract
The resistivity ρ and Hall resistivity ρH are measured on FeSe at pressures up to P=28.3 kbar in magnetic fields up to B=14.5 T. The ρ(B) and ρH(B) curves are analyzed with multicarrier models to estimate the carrier density and mobility as a function of P and temperature (T≤110 K). It is shown that the pressure-induced antiferromagnetic transition is accompanied by an abrupt reduction of the carrier density and scattering. This indicates that the electronic structure is reconstructed significantly by the antiferromagnetic order.
Original language | English |
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Article number | 180503 |
Journal | Physical Review B |
Volume | 93 |
Issue number | 18 |
DOIs | |
Publication status | Published - May 12 2016 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics