Magnetoresistance anomalies at level crossing in double layer quantum Hall systems

K. Kodera, A. Endo, Kaya Kobayashi, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated magnetotransport behavior of a double quantum well system with weak interlayer tunneling. The scaling behavior of the localization property for the Landau levels associated with either layer is in agreement with earlier reports. For the case of Landau level coincidence between the two layers, an anomalous value of the exponent κ≈0.50 is observed. We have observed a peculiar resistance peak at B≃9 T for which the corresponding Hall resistance remains unchanged on both sides of the resistance peak. Hysteretic transition has been found in the region of crossing of the LLs originating from different layers.

Original languageEnglish
Pages (from-to)64-67
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - Apr 2004
Externally publishedYes

Fingerprint

Galvanomagnetic effects
Magnetoresistance
Semiconductor quantum wells
anomalies
Hall resistance
interlayers
quantum wells
exponents
scaling

Keywords

  • Double layer
  • Hysteresis
  • Integer quantum Hall effect
  • Localization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magnetoresistance anomalies at level crossing in double layer quantum Hall systems. / Kodera, K.; Endo, A.; Kobayashi, Kaya; Katsumoto, S.; Iye, Y.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 04.2004, p. 64-67.

Research output: Contribution to journalArticle

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