Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

S. Katsumoto, T. Hayashi, Y. Hashimoto, Y. Iye, Y. Ishiwata, M. Watanabe, R. Eguchi, T. Takeuchi, Y. Harada, S. Shin, K. Hirakawa

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume84
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2001
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors'. Together they form a unique fingerprint.

Cite this