TY - JOUR
T1 - Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors
AU - Katsumoto, S.
AU - Hayashi, T.
AU - Hashimoto, Y.
AU - Iye, Y.
AU - Ishiwata, Y.
AU - Watanabe, M.
AU - Eguchi, R.
AU - Takeuchi, T.
AU - Harada, Y.
AU - Shin, S.
AU - Hirakawa, K.
N1 - Funding Information:
This work is partly supported by Grant-in-Aid for Scientific Research on the Priority Area ‘Spin Controlled Semiconductor Nanostructures’ from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 2001/6/5
Y1 - 2001/6/5
N2 - We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method.
AB - We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method.
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U2 - 10.1016/S0921-5107(01)00575-X
DO - 10.1016/S0921-5107(01)00575-X
M3 - Article
AN - SCOPUS:0035811109
SN - 0921-5107
VL - 84
SP - 88
EP - 95
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-2
ER -