Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors

S. Katsumoto, T. Hayashi, Y. Hashimoto, Y. Iye, Y. Ishiwata, M. Watanabe, Ritsuko Eguchi, T. Takeuchi, Y. Harada, S. Shin, K. Hirakawa

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We report experiments on the magnetism and the transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As. Heat treatment (annealing) at comparatively low temperatures (slightly above the growth temperature) is unexpectedly found to be effective to improve the ferromagnetism and the metallic conduction. IR optical conductivity measurements and soft X-ray absorption spectroscopy reveal that the double exchange model is a convenient picture to describe the ferromagnetism. The transport in the vicinity of metal-insulator critical point was studied in detail by using the low-temperature annealing method.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume84
Issue number1-2
DOIs
Publication statusPublished - Jun 5 2001
Externally publishedYes

Fingerprint

Metal insulator transition
Ferromagnetism
Magnetism
ferromagnetism
insulators
Annealing
Optical conductivity
X ray absorption spectroscopy
annealing
Growth temperature
metals
critical point
absorption spectroscopy
heat treatment
Metals
Heat treatment
conduction
conductivity
Temperature
x rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors. / Katsumoto, S.; Hayashi, T.; Hashimoto, Y.; Iye, Y.; Ishiwata, Y.; Watanabe, M.; Eguchi, Ritsuko; Takeuchi, T.; Harada, Y.; Shin, S.; Hirakawa, K.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 84, No. 1-2, 05.06.2001, p. 88-95.

Research output: Contribution to journalArticle

Katsumoto, S, Hayashi, T, Hashimoto, Y, Iye, Y, Ishiwata, Y, Watanabe, M, Eguchi, R, Takeuchi, T, Harada, Y, Shin, S & Hirakawa, K 2001, 'Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 84, no. 1-2, pp. 88-95. https://doi.org/10.1016/S0921-5107(01)00575-X
Katsumoto, S. ; Hayashi, T. ; Hashimoto, Y. ; Iye, Y. ; Ishiwata, Y. ; Watanabe, M. ; Eguchi, Ritsuko ; Takeuchi, T. ; Harada, Y. ; Shin, S. ; Hirakawa, K. / Magnetism and metal-insulator transition in III-V based diluted magnetic semiconductors. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001 ; Vol. 84, No. 1-2. pp. 88-95.
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AU - Watanabe, M.

AU - Eguchi, Ritsuko

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AU - Shin, S.

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